1: Magnetic Particles: Preparation, Properties and Applications: M. Ozaki. 2: Maghemite (gamma-Fe2O3): A Versatile Magnetic Colloidal Material C.J. Serna, M.P. Morales. 3: Dynamics of Adsorption and Oxidation of Organic Molecules on Illuminated Titanium Dioxide Particles Immersed in Water M.A. Blesa, R.J. Candal, S.A. Bilmes. 4: Colloidal Aggregation in Two-Dimensions A. Moncho-Jorda, F. Martinez-Lopez, M.A. Cabrerizo-Vilchez, R. Hidalgo Alvarez, M. Quesada-PMerez. 5: Kinetics of Particle and Protein Adsorption Z. Adamczyk.

Surface and Colloid Science

Gas-phase tropospheric chemistry of biogenic volatile organic compounds: a review

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas–solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic–organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

An overview on the advanced oxidation processes applied for the treatment of water pollutants defined in the recently launched Directive 2013/39/EU.

Reactive species in advanced oxidation processes: Formation, identification and reaction mechanism

on the germanium Wafer Surface B. Onsia 2, , T. Conard, S. De Gendt , M. Heyns, I. Hoflijk, P. Mertens, M. Meuris, G. Raskin, S. Sioncke, I. Teerlinck, A. Theuwis J. Van Steenbergen and C. Vinckier 1 Imec, kapeldreef 75, B-3001 Heverlee, Belgium 2 K.U.Leuven, Afd. Fysische en Anal. Chemie, Celestijnenlaan 200F, B-3001 Heverlee, Belgium 3 Umicore, Watertorenstraat 33, B-2250 Olen, Belgium a Bart.Onsia@imec.be

A study of the influence of typical wet chemical treatments on the germanium wafer surface

Ozone oxidation of nanofiltration concentrates alleviates membrane fouling in drinking water industry

The reactions of 3d transition metal atoms with N2O, producing the metal oxide and N2, have been studied by means of density functional theory and the coupled cluster method CCSD(T). The importance of charge transfer in the reaction mechanism has been investigated. For Sc, Ti, and V, the transition state is very reagent-like, and almost no charge transfer occurs. On the other hand, charge transfer from the metal 4s orbital into the N2O LUMO becomes more important when moving to the right in the 3d series. The reactions with Sc, Ti, and V proceed almost without energy barriers, whereas for Mn, Fe barriers around 9 kcal/mol are calculated. For transition metal atoms with a 3dn4s2 ground-state configuration, a correlation is found between the activation barriers and the binding energy of the formed metal oxide. The 3dn+14s1 configuration gives rise to a higher reactivity than the 3dn4s2 configuration.

Evaluating the Activation Barriers for Transition Metal N2O Reactions

Introduction In order to keep pace with CMOS scaling trends, alternative gate oxide materials, with a high dielectric constant, were proposed. To have a low interface trap density, good mobility [1], and good Atomic Layer Deposition (ALD) growth characteristics [2], the presence of an interfacial oxide layer is still prerequisite. Hydroxyl groups are the key players for the initiation of the ALD reaction [3]. In this work the application of downscaled ozone based wet chemical oxide as a surface pretreatment for ALD high-k deposition is examined.

On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition

Identification of the oxidation products of the reaction between α-pinene and hydroxyl radicals by gas and high-performance liquid chromatography with mass spectrometric detection

Chris Vinckier

Papers

A study of the influence of typical wet chemical treatments on the germanium wafer surface

Ozone oxidation of nanofiltration concentrates alleviates membrane fouling in drinking water industry

Evaluating the Activation Barriers for Transition Metal N2O Reactions

On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition

Identification of the oxidation products of the reaction between α-pinene and hydroxyl radicals by gas and high-performance liquid chromatography with mass spectrometric detection