M
Marc Meuris
Researcher at University of Hasselt
Publications - 335
Citations - 7963
Marc Meuris is an academic researcher from University of Hasselt. The author has contributed to research in topics: Passivation & Germanium. The author has an hindex of 47, co-authored 331 publications receiving 7570 citations. Previous affiliations of Marc Meuris include Katholieke Universiteit Leuven & IMEC.
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Journal ArticleDOI
On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates
Koen Martens,Chi On Chui,Guy Brammertz,B. De Jaeger,Duygu Kuzum,Marc Meuris,Marc Heyns,Tejas Krishnamohan,Krishna C. Saraswat,Herman Maes,Guido Groeseneken +10 more
TL;DR: In this paper, the authors show that blindly applying these techniques on alternative substrates can lead to incorrect conclusions, and that it is possible to both under- and overestimate the interface trap density by more than an order of magnitude.
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Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
Annelies Delabie,Florence Bellenger,Michel Houssa,Thierry Conard,Sven Van Elshocht,Matty Caymax,Marc Heyns,Marc Meuris +7 more
TL;DR: In this paper, high-k dielectric layers on GeO2, grown at 350-450°C in O2, were deposited by atomic layer deposition (ALD), and ZrO2 and HfO2 intermix during ALD, together with partial reduction of Ge4+.
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Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
David P. Brunco,B. De Jaeger,Geert Eneman,Jerome Mitard,Geert Hellings,Alessandra Satta,Valentina Terzieva,Laurent Souriau,Frederik Leys,Geoffrey Pourtois,Michel Houssa,Gillis Winderickx,E. Vrancken,Sonja Sioncke,Karl Opsomer,G. Nicholas,Matty Caymax,Andre Stesmans,J. Van Steenbergen,Paul W. Mertens,Marc Meuris,M.M. Heyns +21 more
TL;DR: In this article, thin, strained epi-Si is examined as a passivation of the Ge/gate dielectric interface, with an optimized thickness found at 6 monolayers.
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Characterization of defects in 9.7% efficient Cu2ZnSnSe4-CdS-ZnO solar cells
Guy Brammertz,Marie Buffiere,S. Oueslati,S. Oueslati,S. Oueslati,H. Elanzeery,H. Elanzeery,H. Elanzeery,K. Ben Messaoud,K. Ben Messaoud,K. Ben Messaoud,Sylvester Sahayaraj,Sylvester Sahayaraj,Christine Köble,Marc Meuris,Jef Poortmans +15 more
TL;DR: In this paper, the authors have fabricated Cu2ZnSnSe4-CdS-ZnO solar cells with a total area efficiency of 9.7% by selenization of sputtered Cu10Sn90, Zn, and Cu multilayers.
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Diffusion, activation and recrystallization of boron implanted in preamorphized and crystalline germanium
Alessandra Satta,Eddy Simoen,Trudo Clarysse,Tom Janssens,A. Benedetti,B. De Jaeger,Marc Meuris,W. Vandervorst +7 more
TL;DR: In this paper, the authors investigated diffusion and activation of boron implanted with 6 keV energy to a maximum concentration of 8.0×1020atoms∕cm3 in crystalline germanium (c-germanium) and preamorphized germium, employing rapid thermal annealing in the range of 400-600°C.