C
Clemens Nyffeler
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 11
Citations - 288
Clemens Nyffeler is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Electronic circuit & Transistor. The author has an hindex of 6, co-authored 11 publications receiving 256 citations.
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Journal ArticleDOI
MoS2 transistors operating at gigahertz frequencies.
TL;DR: In this paper, top-gated molybdenum disulfide (MoS2) transistors operating in the gigahertz range of frequencies are reported.
Journal ArticleDOI
Observation and modeling of polycrystalline grain formation in Ge2Sb2Te5
Geoffrey W. Burr,Pierre Tchoulfian,Teya Topuria,Clemens Nyffeler,Kumar Virwani,Alvaro Padilla,Robert M. Shelby,Mona Eskandari,Bryan L. Jackson,Bongsub Lee +9 more
TL;DR: In this paper, the formation of fcc polycrystalline grains from the as-deposited amorphous state in undoped Ge2Sb2Te5 was studied.
Proceedings ArticleDOI
High-frequency, scaled MoS2 transistors
TL;DR: In this paper, a top-gated trilayer MoS2 RF transistors with gate lengths scaled down to 70 and 40 nm were presented, where the edge-contacted injection of electrons was introduced to decrease the contact resistance.
Journal ArticleDOI
Resist-assisted assembly of single-walled carbon nanotube devices with nanoscale precision
TL;DR: In this paper, a resist-assisted dielectrophoresis method for single-walled carbon nanotube (SWCNT) assembly is presented, which provides nanoscale control of the location, density, orientation and shape of individual SWCNTs.
Proceedings ArticleDOI
High-frequency, scaled MoS2 transistors
TL;DR: In this paper, a top-gated trilayer MoS2 RF transistors with gate lengths scaled down to 70 and 40 nm were presented, where the edge-contacted injection of electrons was introduced to decrease the contact resistance.