C
Clement Hsingjen Wann
Researcher at TSMC
Publications - 209
Citations - 6479
Clement Hsingjen Wann is an academic researcher from TSMC. The author has contributed to research in topics: Layer (electronics) & Substrate (electronics). The author has an hindex of 37, co-authored 209 publications receiving 6441 citations.
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Patent
Semiconductor Devices and Methods of Manufacture Thereof
TL;DR: In this article, a method of manufacturing a semiconductor device includes forming a channel region in a workpiece, and forming a source or drain region proximate the channel region, which includes a contact resistance-lowering material layer comprising SiP, SiAs, or a silicide.
Patent
System and methods for converting planar design to FinFET design
Yi-Tang Lin,Lei Cheok-Kei,Shu-Yu Chen,Yu-Ning Chang,Hsiao-Hui Chen,Chih-Sheng Chang,Chien-Wen Chen,Clement Hsingjen Wann +7 more
TL;DR: In this article, a method for generating a layout for a device having FinFETs from a first layout of the device having planar transistors is presented, where the planar layout is analyzed and corresponding Fin-FET structures are generated in a matching fashion.
Patent
Contact Structure of Semiconductor Device
TL;DR: In this paper, the authors describe a contact structure for a semiconductor device consisting of a substrate comprising a major surface and a cavity below the major surface, wherein a strained material in the cavity is different from a lattice constant of the substrate.
Patent
In-Situ Doping of Arsenic for Source and Drain Epitaxy
TL;DR: In this paper, a gate stack over a semiconductor region is formed and recessed to form a recess adjacent the gate stack, where a silicon-containing region is epitaxially grown in the recess to create a source/drain stressor.
Patent
Germanium FinFETs with Metal Gates and Stressors
TL;DR: In this paper, an n-type fin field effect transistor (FinFET) and a p-type FinFET are presented, where the first gate electrode and the second gate electrode are formed of a same material having a work function close to an intrinsic energy level of germanium.