D.A. Williams

TL;DR: In this article, a focused ion beam has been used for the fabrication of transmission electron microscopy specimens in pre-selected regions, with no induced artefacts, and the lateral accuracy achievable in the selection of an area for cross-sectional analysis is better than one micrometer.

TL;DR: In this paper, a two-layer stacked SOI system has been used to produce device quality SOI material and a small test-bed circuit has been designed as a demonstration of the feasibility of this approach.

TL;DR: In this article, the effect of selective epitaxial growth (SEG) of silicon in the seed windows of silicon on insulator structures prior to recrystallization has been investigated.

TL;DR: In this article, a dual electron beam system was used to form layers of polycrystalline silicon on insulator for seeded zone melt recrystallization and the quality of the resulting single crystal films has been analysed by a variety of microscopic techniques, including cross sectional scanning and transmission electron microscopy.

TL;DR: In this paper, multiple layers of silicon on insulator have been recrystallized using a dual electron beam technique to produce structures suitable for three dimensional circuit applications, and so a number of strategies have been used, providing a range of opportunities for such applications.