Journal ArticleDOI
Fabrication of Planar and Cross-Sectional TEM Specimens Using a Focused Ion Beam
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TLDR
In this article, a focused ion beam has been used for the fabrication of transmission electron microscopy specimens in pre-selected regions, with no induced artefacts, and the lateral accuracy achievable in the selection of an area for cross-sectional analysis is better than one micrometer.Abstract:
A new technique using a focused ion beam has been developed for the fabrication of transmission electron microscopy specimens in pre-selected regions. The method has been proven in the fabrication of both cross-sectional and planar specimens, with no induced artefacts. The lateral accuracy achievable in the selection of an area for cross-sectional analysis is better than one micrometre. The technique has been applied to a number of silicon and III-V based integrated circuits, and is expected to be suitable for many other materials and structures.read more
Citations
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Applications of focused ion beam microscopy to materials science specimens
TL;DR: Focused ion beam (FIB) systems based on high-brightness gallium liquid-metal ion sources became commercially available in the late 1980s, although even today such instruments are relatively rare outside the somewhat enclosed world of semiconductor manufacturing as mentioned in this paper.
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Preparation of transmission electron microscopy cross-section specimens using focused ion beam milling
TL;DR: The preparation of transmission electron microscopy cross-section specimens using focused ion beam milling using the “liftout” and “trench” techniques are outlined, and their relative advantages and disadvantages are discussed.
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FIB-induced damage in silicon.
TL;DR: Monte Carlo modelling of the damage formed indicates that recoil silicon atoms contribute significantly to the damaged formed in the specimen, indicating that redeposition of milled material, enriched in gallium, can occur depending on the geometry of the mill employed.
Journal ArticleDOI
The correlation between ion beam/material interactions and practical FIB specimen preparation.
B. I. Prenitzer,C.A. Urbanik-Shannon,Lucille A. Giannuzzi,S. R. Brown,R. B. Irwin,T. L. Shofner,Fred A. Stevie +6 more
TL;DR: The fundamental ion/solid interactions that govern the FIB milling process are examined and discussed with respect to the preparation of electron transparent membranes and the roles of incident ion attack angle, beam current, trench geometry, raster pattern, and target-material-dependent removal rates are considered.
Journal ArticleDOI
Microchannel Fabrication on Glass Materials for Microfluidic Devices
TL;DR: In this article, the state of the art for these processes, and their advantages and limits are also addressed, which will guide in selecting the processes suitable for constructing glass-based microfluidic devices.
References
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Journal ArticleDOI
Pressure and irradiation angle dependence of maskless ion beam assisted etching of GaAs and Si
TL;DR: Maskless ion beam assisted etching of GaAs and Si has been investigated in this article, where focused Ga+ ion beam was irradiated on GaAs in chlorine and xenon difluoride gas atmosphere, respectively, and it was found that an optimum gas pressure existed to improve the etching rate.
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Channelling ion image contrast and sputtering in gold specimens observed in a high-resolution scanning ion microscope
TL;DR: In this paper, the interdependence of directional effects on the sputtering rate and the secondary-electron emission from materials, both of which are affected by ion channelling, was investigated.
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Formation of silicon-on-insulator layers by electron beam recrystallization
TL;DR: In this article, the development of the electron beam recrystallization approach to the formation of silicon-on-insulator layers is outlined, both from materials and process points of view.