Trace gas detection with antimonide-based quantum-well diode lasers.

GaSb-based mid-infrared 2-5 µm laser diodes, in Solid-State Mid Infrared Laser Sources

GaSb-based mid-infrared 2–5 μm laser diodes

ZnO/GaN heterojunction based self-powered photodetectors: Influence of interfacial states on UV sensing

DFB laser diodes in the wavelength range from 760 nm to 2.5 μm

Narrow ridge GaInSbAs/GaSb type-II QW lasers emitting at 2.37-2.4 µm have been fabricated. The lasers operated in the cw regime at room temperature with the output optical power up to 20 mW/facet. The internal quantum efficiency of the lasers was found to be 89% and the power efficiency reached 20%. The lasers emitted in the fundamental spatial mode and exhibited single frequency operation in a large range of currents and temperatures. The emission wavelength could be continuously tuned by current over 0.7-1.2 nm. The single longitudinal mode behaviour was explained by the photorefractive effect due to DX centres in the Te-doped GaAlSbAs cladding layer acting as a saturable absorber.

https://iopscience.iop.org/article/10.1088/0268-1242/15/4/314/pdf

High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers

A study of the effects of the injected current and the thermal resistance on the tunability of antimonide-based diode lasers is presented. The studied diode lasers, emitting at around 2.3 µm, are dedicated to gas detection in the atmosphere, based on tunable-diode-laser absorption spectroscopy (TDLAS). This very useful technique requires, from the lasers, an emitted tunable wavelength able to cross a gas absorption line to detect the absorbed light. Typically a tuning rate of a few GHz/mA is sufficient to perform gas detection at atmospheric pressure (Vicet et al., 2002). It is then important to know and understand the tuning properties of the devices to achieve gas detection. They are very sensitive to thermal effects which are involved in all tuning processes. The lasers studied are shown to be well adapted to gas detection, paradoxically because of their large thermal resistance Rth which increases Joule heating, and mainly affects their tunability.

Tunability of antimonide-based semiconductor lasers diodes and experimental evaluation of the thermal resistance

Low-threshold laser emission at room temperature of a GaSb-based quantum well structure is reported in this paper. The optical and electrical confinement of the structure have been improved by inserting an aluminium oxide layer obtained by wet oxidation of AlAs in the upper confinement layer. The strains between the oxide layer and the contiguous layers (GaAs and GaSb) are compensated by an AlAs/GaAs superlattice. The resulting morphology of the oxidized AlAs layers is presented.

Use of AlOx in cladding layers of an antimonide laser structure emitting at 2.3 µm

There is a need for low-cost and portable equipment. The exigency in terms of the sensitivity lies around the 1 ppm level. Tunable diode laser spectroscopy (TDLAS) appears to be the best candidate to fulfill these requirements. To be performed in good conditions TDLAS needs the laser to be operated in continuous mode. Unfortunately there is presently no semiconductor laser able to operate in cw mode beyond 2.7 /spl mu/m at room temperature. We try to overcome this problem.

Semiconductor mid-infrared lasers working at high temperature application to gas analysis

The theoretical analysis that was made shows the way of suppressing of Auger recombination and improving current characteristics of mid-IR long wavelength sources of laser radiation based on InGaAsSb/GaSb.

D.A. Yarekha

Papers

High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers

Tunability of antimonide-based semiconductor lasers diodes and experimental evaluation of the thermal resistance

Use of AlOx in cladding layers of an antimonide laser structure emitting at 2.3 µm

Semiconductor mid-infrared lasers working at high temperature application to gas analysis

Importance of as mole fraction on Auger recombination value in strained MQW GaInAsSb lasers