We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

Modulation spectroscopy is a powerful method for the study and characterization of a large number of semiconductor configurations, including bulk/thin film, microstructures (heterojunctions, quantum wells, superlattices, quantum dots), surfaces/interfaces and actual device structures in addition to semiconductor growth/processing. Furthermore, the influence of external perturbations such as temperature, electric fields, hydrostatic pressure, uniaxial stress, etc. can be investigated. This optical technique utilizes a very general principle of experimental physics, in which a periodically applied perturbation (either to the sample or probe) leads to sharp, derivative-like spectral features in the optical response of the system. Because of the richness of the derivative-like spectra, the information in the lineshape fits, room temperature performance and relative simplicity of operation this method is becoming increasingly more important as a tool to study these materials and structures. This article will review developments in the field during the last decade.

Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices

The refractive indices of AlxGa1−xAs epitaxial layers (0.176⩽x⩽1) are accurately determined below the band gap to wavelengths, λ<3 μm. The layers are grown on GaAs substrates by molecular beam epitaxy metal organic and chemical vapor deposition with thicknesses ranging from 4 to 10 μm. They form improper waveguide structures with the GaAs substrate. The measurements are based on the excitation of the improper waveguide modes with grating couplers at 23 °C. The refractive indices of the layers are derived from the modal propagation constants in the range of 730 nm<λ<830 nm with an estimated uncertainty of Δn=5×10−4. The temperature coefficient of the refractive index is investigated in the same spectral range. From the effective indices of the TE and TM modes, we derive the strain-induced birefringence and the elasto-optic coefficients. High-resolution x-ray diffraction is used to determine the strain of the layers. The layer compositions are obtained with inductively coupled plasma atomic emission spectro...

The refractive index of AlxGa1−xAs below the band gap: Accurate determination and empirical modeling

The density-matrix theory of semiconductor lasers with relaxation broadening model is finally established by introducing theoretical dipole moment into previously developed treatments. The dipole moment is given theoretically by the k . p method and is calculated for various semiconductor materials. As a result, gain and gain-suppression for a variety of crystals covering wide wavelength region are calculated. It is found that the linear gain is larger for longer wavelength lasers and that the gain-suppression is much larger for longer wavelength lasers, which results in that single-mode operation is more stable in long-wavelength lasers than in shorter-wavelength lasers, in good agreement with the experiments.

Density-matrix theory of semiconductor lasers with relaxation broadening model - Gain and gain-suppression in semiconductor lasers

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http://ieeexplore.ieee.org/iel5/3/23092/01072971.pdf

Integrated optics

Multiple quantum well InAs/GaSb laser heterostructures with type III (type II broken gap) band alignment in the active region have been grown by molecular beam epitaxy. Intense electroluminescence was observed at room temperature (RT) with peak emission wavelengths in the range 1.95–3.4 μm. RT lasing has been achieved at 1.98 and 2.32 μm for the structures with 6 and 12 A thick InAs quantum wells, respectively.

Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures

We propose the use of strained InAs/Ga0.47In0.53As quantum wells (QWs) for light emission in the technologically important mid‐IR wavelength range. Temperature dependent photoluminescence measurements on single QWs demonstrate that light emission at room temperature is obtained from all samples having InAs QW widths between 2 and 23 monolayers. Luminescence up to 2.4 μm is obtained at 300 K, which is the longest wavelength achieved so far for QWs grown on InP. These results demonstrate the potential of the InAs/Ga0.47In0.53As QW materials system for the fabrication of optoelectronic devices operating in the mid‐IR.

InAs/Ga0.47In0.53As quantum wells: A new III‐V materials system for light emission in the mid‐infrared wavelength range

GaSb-based heterostructures with strained-layer (x = 0.26 or x = 0.35) single quantum wells and cladding layers were grown by molecular beam epitaxy. The thickness of the GaInSb well was varied from 3.0 to 14.5 nm. Intense room-temperature electroluminescence was observed from mesa diodes with peak emission wavelengths in the spectral range. The dependence of emission energy on well thickness is consistent with the predictions obtained by an effective mass treatment assuming a rectangular type I quantum well and a conduction band offset .

Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy

Narrow ridge GaInSbAs/GaSb type-II QW lasers emitting at 2.37-2.4 µm have been fabricated. The lasers operated in the cw regime at room temperature with the output optical power up to 20 mW/facet. The internal quantum efficiency of the lasers was found to be 89% and the power efficiency reached 20%. The lasers emitted in the fundamental spatial mode and exhibited single frequency operation in a large range of currents and temperatures. The emission wavelength could be continuously tuned by current over 0.7-1.2 nm. The single longitudinal mode behaviour was explained by the photorefractive effect due to DX centres in the Te-doped GaAlSbAs cladding layer acting as a saturable absorber.

https://iopscience.iop.org/article/10.1088/0268-1242/15/4/314/pdf

High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers

A calculation for an effective mass model of a double quantum well structure subjected to a moderate electric field is presented. The behavior of the transitions between energy levels is investigated, allowing prediction of an effective blue shift in the optical spectrum of this simple system. It is suggested that the optimum strategy for obtaining a rapid effect is to reduce the coupling between the heavy hole states.

C. Alibert

Papers

Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures

InAs/Ga0.47In0.53As quantum wells: A new III‐V materials system for light emission in the mid‐infrared wavelength range

Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy

High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers

Optical blue shift in a double quantum well structure under an electric field