D. Pfisterer

TL;DR: In this paper, electrical, optical and magnetic resonance spectroscopy were used to characterize ZnO bulk crystals and showed that residual carrier concentration is caused by residual H, Al, Ga, and oxygen vacancies in the material.

TL;DR: The chemical nature of donors unintentionally present in ZnO nanocrystals prepared by chemical methods has been studied by high frequency electron paramagnetic resonance and electron nuclear double resonance as mentioned in this paper.

TL;DR: In this paper, the intensity of the oxygen vacancy (VO) related emission in ZnO at 2.45 eV correlates to the concentration of the donor level E4, located 530 meV below the conduction band and attributed to the VO0/++ recharging.

TL;DR: In this paper, the effects of substrate nitridation and buffer layers on the structural quality of GaN grown by HVPE were investigated and it was shown that at certain process conditions, both substrate nitric acid and buffer layer can improve the crystalline quality of the GaN.

TL;DR: In this paper, the effects of flow modulation on the crystalline quality and morphology of GaN epilayers grown by hydride vapor phase epitaxy were demonstrated, and the improvement in the structural qualtiy was attributed to the strain relaxation, dislocations suppression and enhanced Ga diffusion.