D
D.Y. Mokeev
Researcher at Tomsk State University
Publications - 10
Citations - 74
D.Y. Mokeev is an academic researcher from Tomsk State University. The author has contributed to research in topics: Detector & Particle detector. The author has an hindex of 5, co-authored 10 publications receiving 69 citations.
Papers
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Journal ArticleDOI
Investigation of the radiation hardness of GaAs sensors in an electron beam
K. Afanaciev,M. Bergholz,Petty Bernitt,G. A. Chelkov,J. Gajewski,M. I. Gostkin,C. Grah,R.L. Heller,H. Henschel,A. Ignatenko,Z. V. Krumshteyn,Szymon Kulis,Wolfgang Lange,Wolfgang Lohmann,D.Y. Mokeev,V. A. Novikov,M. Ohlerich,A. Rosca,Andrey Sapronov,R. Schmidt,S. Schuwalow,O. P. Tolbanov,A. V. Tyazhev +22 more
TL;DR: In this article, a compact and finely grained sandwich calorimeter is designed to instrument the very forward region of a detector at a future e+e-collider, which will be exposed to low energy pairs originating from beamstrahlung, resulting in absorbed doses of about one MGy per year.
Journal ArticleDOI
GaAs Pixel Detectors
A. V. Tyazhev,D.L. Budnitsky,D.Y. Mokeev,V. A. Novikov,A. Zarubin,O.P. Tolbanov,G Shelkov,E. Hamann,Alex Fauler,Michael Fiederle,S. Procz +10 more
TL;DR: In this article, the results of investigation of X-ray sensors on the basis of GaAs compensated with chromium (HR GaAs) are presented in the work of the authors.
Proceedings ArticleDOI
Non-equilibrium Charge Carriers Life Times in Semi-Insulating GaAs Compensated with Chromium
A. Zarubin,D.Y. Mokeev,Lyudmila Okaevich,A. V. Tyazhev,Mikhail Bimatov,Mikhail Lelekov,Ivan Ponomarev +6 more
TL;DR: In this paper, the observed data of a life time of non-equilibrium charge carriers in detectors based on GaAs, compensated with Cr are shown on the basis of the analysis of experimental data, established, that in electrical fields with strength in range from 1 to 10 kV/s the values of nonequilibrium electrons and holes life times do not depend on electric field strength.
Journal ArticleDOI
GaAs detector material made from 3-inch wafers
G.I. Ayzenshtat,D.L. Budnitsky,O.B. Koretskaya,V. A. Novikov,D.Y. Mokeev,L.S. Okaevich,O.P. Tolbanov,A. V. Tyazhev +7 more
TL;DR: In this article, the first results obtained with pad detectors processed from 3 inch diameter GaAs wafers compensated with Cr. The detector characteristics are analyzed from the point of view of uniformity across the wafer.
Proceedings ArticleDOI
GaAs radiation imaging detectors for nondestructive testing, medical, and biological applications
A. V. Tyazhev,Vladimir A. Novikov,Olga B. Koretskaya,D.Y. Mokeev,O. P. Tolbanov,S.A. Ryabkov,Gennady I. Ayzenshtat +6 more
TL;DR: In this article, the GaAs:Cr ionizing radiation detectors and X-ray digital imaging systems based on such detectors are presented, which exhibit high speed of response (≤10ns) and high X-and charged-particle radiation sensitivity.