https://iopscience.iop.org/article/10.1088/1361-6641/aad831/pdf

Review of SiC crystal growth technology

Recent advances in 4H-SiC epitaxy for high-voltage power devices

A new type of 150 mm vertical 4H-SiC epitaxial reactor with high-speed wafer rotation has been developed. Multiple resistance heaters ensure uniform radial temperature distribution throughout a 150-mm-diameter wafer. Enhancement of the growth rates is realized by high-speed wafer rotation under a relatively high system pressure, and growth rates of 40?50 ?m/h are achieved on 4? off 4H-SiC substrates, maintaining a low defect density and a smooth surface without macrostep bunching. Excellent thickness and doping uniformities are simultaneously obtained for a 150-mm-diameter wafer at a high growth rate of 50 ?m/h.

https://iopscience.iop.org/article/10.7567/APEX.7.015502/pdf

Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation

Elimination of silicon gas phase nucleation using tetrafluorosilane (SiF4) precursor for high quality thick silicon carbide (SiC) homoepitaxy

http://jss.ecsdl.org/content/2/8/N3012.full.pdf

4H-SiC Homoepitaxial Growth on Substrate with Vicinal Off-Angle Lower than 1°

Initial results are presented for SiC-epitaxial growths employing a novel 6x150-mm/10x100-mm Warm-Wall Planetary Vapor-Phase Epitaxial (VPE) Reactor. The increased areal throughput offered by this reactor and 150-mm diameter wafers, is intended to reduce the cost per unit area for SiC epitaxial layers, increasing the market penetration of already successful commercial SiC Schottky and MOSFET devices [1]. Growth rates of 20 micron/hr and short

Dan Barnhardt

Papers

SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor