Journal ArticleDOI
SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor
Albert A. Burk,Denis Tsvetkov,Dan Barnhardt,Michael J. O'Loughlin,Lara Garrett,Paul Towner,Jeff Seaman,Eugene Deyneka,Yuri I. Khlebnikov,John W. Palmour +9 more
TLDR
In this article, a 6x150mm/10x100mm Warm-Wall Planetary Vapor-Phase Epitaxial (VPE) Reactor was used for SiC epitaxial growth.Abstract:
Initial results are presented for SiC-epitaxial growths employing a novel 6x150-mm/10x100-mm Warm-Wall Planetary Vapor-Phase Epitaxial (VPE) Reactor. The increased areal throughput offered by this reactor and 150-mm diameter wafers, is intended to reduce the cost per unit area for SiC epitaxial layers, increasing the market penetration of already successful commercial SiC Schottky and MOSFET devices [1]. Growth rates of 20 micron/hr and shortread more
Citations
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Journal ArticleDOI
Recent advances in 4H-SiC epitaxy for high-voltage power devices
TL;DR: In this article, a single-wafer vertical-type epitaxial reactor is used to grow 150mm-diameter 4H-SiC epilayers, and high-speed wafer rotation is confirmed effective for enhancing growth rates and improving thickness and doping uniformities.
Journal ArticleDOI
Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation
Hiroaki Fujibayashi,Hiroaki Fujibayashi,Masahiko Ito,Hideki Ito,Isaho Kamata,Masami Naito,Kazukuni Hara,Shoichi Yamauchi,Kunihiko Suzuki,Masayoshi Yajima,Shinichi Mitani,Suzuki Katsumi,Hirofumi Aoki,Koichi Nishikawa,Takahiro Kozawa,Hidekazu Tsuchida +15 more
TL;DR: In this article, a new type of 150 mm vertical 4H-SiC epitaxial reactor with high-speed wafer rotation has been developed, where multiple resistance heaters ensure uniform radial temperature distribution throughout a 150mm-diameter wafer.
References
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Journal ArticleDOI
Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
Toru Hiyoshi,Tsunenobu Kimoto +1 more
TL;DR: By thermal oxidation of 4H-SiC at 1150-1300 °C, the Z1/2 and EH6/7 concentrations can be reduced to below 1×1011 cm-3.
Journal ArticleDOI
High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor
Christian Hecht,René A. Stein,Bernd Thomas,Larissa Wehrhahn-Kilian,Jonas Rosberg,Hiroya Kitahata,Frank Wischmeyer +6 more
TL;DR: In this paper, the first results of epitaxial layer deposition using a novel warm-wall CVD multi-wafer system AIX 2800G4 WW from AIXTRON with a capability of processing 10x100mm wafers per run were presented.
Journal ArticleDOI
SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor
Journal ArticleDOI
SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
Albert A. Burk,Michael J. O'Loughlin,Joseph John Sumakeris,Christer Hallin,Elif Berkman,Vijay Balakrishna,Jonathan Young,Lara Garrett,Kenneth G. Irvine,Adrian Powell,Yuri I. Khlebnikov,R.T. Leonard,Cem Basceri,Brett Hull,Anant K. Agarwal +14 more
TL;DR: In this paper, the development of SiC bulk and epitaxial materials is reviewed with an emphasis on epitaxia growth using high-throughput, multi-wafer, vapor phase epitaxials warm-wall planetary reactors.