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Dangwen Zhang
Researcher at Chinese Academy of Sciences
Publications - 6
Citations - 382
Dangwen Zhang is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Nanorod & Graphene. The author has an hindex of 6, co-authored 6 publications receiving 352 citations.
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Photoluminescence investigation on the gas sensing property of ZnO nanorods prepared by plasma-enhanced CVD method
TL;DR: In this article, the gas sensing property of ZnO nanorods prepared by plasmaenhanced chemical vapor deposition (CVD) method is studied using formaldehyde as the probe gas, and the intrinsic defects are investigated by photoluminescence (PL).
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Highly formaldehyde-sensitive, transition-metal doped ZnO nanorods prepared by plasma-enhanced chemical vapor deposition
TL;DR: In this article, Ni, Cu, and Co are used as dopants for the synthesis of highly formaldehyde-sensitive ZnO nanorods prepared by plasma enhanced chemical vapor deposition (PECVD) method.
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CdO activated Sn-doped ZnO for highly sensitive, selective and stable formaldehyde sensor
TL;DR: In this article, the formaldehyde gas sensing properties are evaluated and the results show that 2.2 mol% Sn dopant can increase the response of ZnO by more than 2 folds, while other dopants increase little response or even decrease response.
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Chemical vapor deposition preparation of nanostructured ZnO particles and their gas-sensing properties
TL;DR: In this article, a simple and versatile chemical vapor deposition process was used to extract structural properties of ZnO materials including Zn@ZnO core-shell structure (CS), Zn o hollow sphere (HS), and hierarchically structured Zn O hollow microsphere with nanorods (HSNR) grown on the outer surface.
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Efficient and cost-effective graphene on silicon solar cells prepared by spray coating
TL;DR: In this article, the authors demonstrate the first example of efficient and cost-effective graphene on silicon solar cells prepared using spray coating, which is optimized by investigating the effects of substrate temperature and graphene film thickness on device performance.