D
Daniel Hägele
Researcher at Ruhr University Bochum
Publications - 65
Citations - 2262
Daniel Hägele is an academic researcher from Ruhr University Bochum. The author has contributed to research in topics: Spin polarization & Exciton. The author has an hindex of 20, co-authored 64 publications receiving 2131 citations. Previous affiliations of Daniel Hägele include University of California, Berkeley & University of Marburg.
Papers
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Journal ArticleDOI
Ultrafast terahertz probes of transient conducting and insulating phases in an electron–hole gas
Robert A. Kaindl,Robert A. Kaindl,M.A. Carnahan,M.A. Carnahan,Daniel Hägele,Daniel Hägele,Reinhold Lovenich,Reinhold Lovenich,Daniel S. Chemla,Daniel S. Chemla +9 more
TL;DR: An ultrafast terahertz probe is employed to investigate directly the dynamical interplay of optically-generated excitons and unbound electron–hole pairs in GaAs quantum wells, revealing an unexpected quasi-instantaneous excitonic enhancement, the formation of insulating excitONS on a 100-ps timescale, and the conditions under which excitonics populations prevail.
Journal ArticleDOI
Spin injection into semiconductors
Michael Oestreich,Jens Hübner,Daniel Hägele,Peter J. Klar,Wolfram Heimbrodt,W. W. Rühle,D.E. Ashenford,B. Lunn +7 more
TL;DR: In this article, the authors proposed and demonstrated a most efficient spin injection using diluted magnetic semiconductors as spin aligners, which proved the feasibility of the spin-alignment mechanism.
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Spin transport in GaAs
TL;DR: In this paper, an almost complete conservation of the orientation of the electron spin during transport in GaAs over a distance as long as 4 μm and fields up to 6 kV/cm was demonstrated.
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Laser threshold reduction in a spintronic device
TL;DR: In this article, the authors demonstrate a reduction of the threshold of a semiconductor laser by optically pumping spin-polarized electrons in the gain medium, and theoretically show that their concept can be generalized to an electrically pumped laser.
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Spin noise spectroscopy in GaAs.
TL;DR: The electron-spin relaxation time and the electron Landé g factor in -doped GaAs at low temperatures is measured and good agreement of the measured noise spectrum with a theory based on Poisson distribution probability is found.