Daniel S. Schulman

TL;DR: The phenomenon of Fermi level pinning at the metal/2D contact interface, the Schottky versus Ohmic nature of the contacts and various contact engineering approaches including interlayer contacts, phase engineered contacts, and basal versus edge plane contacts are elucidated.

TL;DR: In this paper, a back-gated MoS2 field effect transistor (FET) was used to mimic the quantal, stochastic, and excitatory or inhibitory nature of neurotransmitter release in chemical synapses.

TL;DR: According to electronic transport measurements, undoped WS2 exhibits a unipolar n-type conduction, but the CH-WS2 monolayers show the emergence of a p-branch and gradually become entirely p-type, as the carbon doping level increases, therefore, CH-groups embedded into the WS2 lattice tailor its electronic and optical characteristics.

TL;DR: The results reveal an important nucleation mechanism for the epitaxial growth of van der Waals heterostructures and demonstrate hBN as a superior substrate for single-crystal transition-metal dichalcogenide (TMD) films, resulting in a reduced density of IDBs and improved properties.

TL;DR: Genetic algorithms and molecular dynamics simulations are combined to investigate the extended structure of point defects, their dynamical evolution, and their role in inducing the phase transition between the semiconducting and metallic phase in monolayer MoS2, and find that organization of sulfur vacancies into extended lines is the most energetically favorable.