V
Vinayak P. Dravid
Researcher at Northwestern University
Publications - 883
Citations - 53139
Vinayak P. Dravid is an academic researcher from Northwestern University. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 103, co-authored 817 publications receiving 43612 citations. Previous affiliations of Vinayak P. Dravid include Tianjin University of Technology & International Institute of Minnesota.
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Journal ArticleDOI
Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals
Li-Dong Zhao,Shih Han Lo,Yongsheng Zhang,Hui Sun,Gangjian Tan,Ctirad Uher,Chris Wolverton,Vinayak P. Dravid,Mercouri G. Kanatzidis +8 more
TL;DR: An unprecedented ZT of 2.6 ± 0.3 at 923 K is reported in SnSe single crystals measured along the b axis of the room-temperature orthorhombic unit cell, which highlights alternative strategies to nanostructuring for achieving high thermoelectric performance.
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High-performance bulk thermoelectrics with all-scale hierarchical architectures
Kanishka Biswas,Jiaqing He,Ivan Blum,Ivan Blum,Chun I. Wu,Timothy P. Hogan,Timothy P. Hogan,David N. Seidman,Vinayak P. Dravid,Mercouri G. Kanatzidis,Mercouri G. Kanatzidis +10 more
TL;DR: It is shown that heat-carrying phonons with long mean free paths can be scattered by controlling and fine-tuning the mesoscale architecture of nanostructured thermoelectric materials, and an increase in ZT beyond the threshold of 2 highlights the role of, and need for, multiscale hierarchical architecture in controlling phonon scattering in bulk thermoeLECTrics.
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Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe
Li-Dong Zhao,Li-Dong Zhao,Gangjian Tan,Shiqiang Hao,Jiaqing He,Yanling Pei,Hang Chi,Heng Wang,Shengkai Gong,Huibin Xu,Vinayak P. Dravid,Ctirad Uher,G. Jeffrey Snyder,Chris Wolverton,Mercouri G. Kanatzidis +14 more
TL;DR: A record high ZTdev ∼1.34, with ZT ranging from 0.7 to 2.0 at 300 to 773 kelvin, realized in hole-doped tin selenide (SnSe) crystals, arises from the ultrahigh power factor, which comes from a high electrical conductivity and a strongly enhanced Seebeck coefficient enabled by the contribution of multiple electronic valence bands present in SnSe.
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Sensing behavior of atomically thin-layered MoS2 transistors
Dattatray J. Late,Yi Kai Huang,B. T. Liu,Jagaran Acharya,Jagaran Acharya,Sharmila N. Shirodkar,Jiajun Luo,Aiming Yan,Daniel Charles,Umesh V. Waghmare,Vinayak P. Dravid,C. N. R. Rao +11 more
TL;DR: The results show that, compared to the single-layer counterpart, transistors of few MoS2 layers exhibit excellent sensitivity, recovery, and ability to be manipulated by gate bias and green light, and ab initio DFT calculations show that the charge transfer is the reason for the decrease in resistance in the presence of applied field.
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Hysteresis in single-layer MoS2 field effect transistors.
TL;DR: Uniform encapsulation of MoS(2) transistor structures with silicon nitride grown by plasma-enhanced chemical vapor deposition is effective in minimizing the hysteresis, while the device mobility is improved by over 1 order of magnitude.