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David Cooper

Researcher at University of Grenoble

Publications -  51
Citations -  1608

David Cooper is an academic researcher from University of Grenoble. The author has contributed to research in topics: Electron holography & Dark field microscopy. The author has an hindex of 19, co-authored 45 publications receiving 1326 citations. Previous affiliations of David Cooper include IBM.

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Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM

TL;DR: It is found that an increase in the overall O vacancy concentration within the device after positive (negative) biasing of the Schottky-type electrode is associated with the electrocatalytic release and reincorporation of oxygen at the electrode/oxide interface and is responsible for the resistance change.
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Improved strain precision with high spatial resolution using nanobeam precession electron diffraction

TL;DR: In this article, a precessing of the electron beam makes the diffraction spots more uniform and numerous, making N-PED more robust and precise, and smaller probe size and better precision are achieved by having diffraction disks instead of diffraction dots.
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Molecular epidemiology of Mycobacterium bovis isolates from free-ranging wildlife in South African game reserves.

TL;DR: The molecular characterisation of 189 Mycobacterium bovis isolates from nine wildlife species in the HiP, including three smaller associated parks, and the Kruger National Park showed that the respective epidemics were each caused by an infiltration of a single M.bovis genotype.
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Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope

TL;DR: Dark field electron holography, the geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images, nanobeam diffraction and precession diffraction, all performed at the state-of-the-art to five different types of semiconductor samples.
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Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE

TL;DR: The structural and optical properties of InGaN/GaN nanowire heterostructures grown by plasma-assisted molecular beam epitaxy have been studied using a combination of transmission electron microscopy, electron tomography and photoluminescence spectroscopy.