B
Byung-Gook Park
Researcher at Seoul National University
Publications - 850
Citations - 11064
Byung-Gook Park is an academic researcher from Seoul National University. The author has contributed to research in topics: Transistor & MOSFET. The author has an hindex of 38, co-authored 838 publications receiving 9095 citations. Previous affiliations of Byung-Gook Park include Stanford University & Samsung.
Papers
More filters
Journal ArticleDOI
Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
TL;DR: In this paper, a 70-nm n-channel tunneling field effect transistor (TFET) with sub-threshold swing (SS) of 52.8 mV/dec at room temperature was demonstrated.
Journal ArticleDOI
Demonstration of L-Shaped Tunnel Field-Effect Transistors
TL;DR: In this article, an L-shaped tunnel FET (TFET), which features band-to-band tunneling (BTBT) perpendicular to the channel direction, is experimentally demonstrated for the first time.
Journal ArticleDOI
Single-Crystalline Si STacked ARray (STAR) NAND Flash Memory
Jang-Gn Yun,Garam Kim,Joung-Eob Lee,Yoon Kim,Wonbo Shim,Jong-Ho Lee,Hyungcheol Shin,Jong Duk Lee,Byung-Gook Park +8 more
TL;DR: In this paper, a 3D NAND flash memory array with multiple single-crystal Si nanowires is investigated, where the array structure and fabrication process are described, including the electrical isolation of stacked nanwires.
Journal ArticleDOI
Analog Synaptic Behavior of a Silicon Nitride Memristor
TL;DR: A possible way to mimic biological synapse function for energy-efficient neuromorphic systems by using a conventional passive SiNx layer as an active dielectric with complementary metal-oxide-semiconductor compatibility and expandability to three-dimensional crossbar array architecture is provided.
Journal ArticleDOI
RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs
TL;DR: In this article, the authors presented a radiofrequency (RF) model and extracted model parameters for junctionless silicon nanowire (JLSNW) metal-oxide-semiconductor field effect transistors (MOSFETs) using a 3D device simulator.