There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

Carrier concentration profiles of two-dimensional electron gases are investigated in wurtzite, Ga-face AlxGa1−xN/GaN/AlxGa1−xN and N-face GaN/AlxGa1−xN/GaN heterostructures used for the fabrication of field effect transistors. Analysis of the measured electron distributions in heterostructures with AlGaN barrier layers of different Al concentrations (0.15<x<0.5) and thickness between 20 and 65 nm demonstrate the important role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces. Characterization of the electrical properties of nominally undoped transistor structures reveals the presence of high sheet carrier concentrations, increasing from 6×1012 to 2×1013 cm−2 in the GaN channel with increasing Al-concentration from x=0.15 to 0.31. The observed high sheet carrier concentrations and strong confinement at specific interfaces of the N- and Ga-face pseudomorphic grown heterostructures can be explained as a consequence of interface charges induced by ...

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Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...

Band parameters for nitrogen-containing semiconductors

The field of power harvesting has experienced significant growth over the past few years due to the ever-increasing desire to produce portable and wireless electronics with extended lifespans. Current portable and wireless devices must be designed to include electrochemical batteries as the power source. The use of batteries can be troublesome due to their limited lifespan, thus necessitating their periodic replacement. In the case of wireless sensors that are to be placed in remote locations, the sensor must be easily accessible or of a disposable nature to allow the device to function over extended periods of time. Energy scavenging devices are designed to capture the ambient energy surrounding the electronics and convert it into usable electrical energy. The concept of power harvesting works towards developing self-powered devices that do not require replaceable power supplies. A number of sources of harvestable ambient energy exist, including waste heat, vibration, electromagnetic waves, wind, flowing water, and solar energy. While each of these sources of energy can be effectively used to power remote sensors, the structural and biological communities have placed an emphasis on scavenging vibrational energy with piezoelectric materials. This article will review recent literature in the field of power harvesting and present the current state of power harvesting in its drive to create completely self-powered devices.

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A review of power harvesting using piezoelectric materials (2003–2006)

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The p...

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Luminescence properties of defects in GaN

The crystallization of undoped amorphous silicon films deposited by low‐pressure chemical vapor deposition in the temperature range 580–530 °C and annealed from 550 to 950 °C has been studied by transmission electron microscopy. The average grain size of the crystallized films depends on the annealing temperature and the deposition conditions. The nucleation rate of new grains during annealing decreases as the deposition temperature decreases from 580 to 545 °C and/or when the deposition rate increases. The final grain size is also influenced by the annealing temperature with the largest grain size obtained at low annealing temperatures. A simple model is described which explains the dependence of grain size on the annealing temperature. An average grain size of 500 nm has been obtained in a 200‐nm film deposited at 545 °C and annealed at 550 °C.

Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films

Reconstructions of the GaN(000 ) surface are studied for the first time. Using scanning tunneling microscopy and reflection high-energy electron diffraction, four primary structures are observed: 1 ×1, 3×3, 6×6, and c(6×12). On the basis of first-principles calculations, the 1 ×1 structure is shown to consist of a Ga monolayer bonded to a N-terminated GaN bilayer. From a combination of experiment and theory, it is argued that the 3×3 structure is an adatom-on-adlayer structure with one additional Ga atom per 3×3 unit cell. Gallium nitride and other III-nitrides have attracted considerable interest recently because of their application for blue light-emitting diodes and lasers.[1] These materials have several unique properties compared to the more conventional III-V semiconductors (GaAs, InP, etc.): they exist in both cubic (zincblende) and hexagonal (wurtzite) form, they are refractory, and some of the materials have large band gaps. The relatively small size of nitrogen, compared to Ga or In, in these compounds leads to a number of unique surface structures, which have begun to be explored both experimentally and theoretically for the (001) growth surface of cubic GaN.[2,3] However, for the technologically more relevant (0001) growth surface of hexagonal GaN, very little is known concerning its structure aside from several reports of 2×2 and other reconstructions based on reflection high-energy electron diffraction (RHEED).[4] It is important to understand the surface structures of these materials, since this knowledge will impact our ability to achieve high quality epitaxial growth of the materials as required for optoelectronic applications.

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Reconstructions of the GaN\(0001̄\) Surface

Reconstructions of GaN(0001) and (0001) surfaces are studied by scanning tunneling microscopy and spectroscopy, by electron diffraction, by Auger electron spectroscopy, and using first-principles theory. Attention is focused on Ga-rich reconstructions for each surface, which are found to have a metallic character involving significant overlap between Ga valence electrons. The electron counting rule is thus violated for these surfaces, but they nonetheless form minimum energy structures.

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Reconstructions of GaN(0001) and (0001̄) surfaces: Ga-rich metallic structures

Surface acoustic wave (SAW) technology provides a sensitive platform for sensing chemicals in gaseous and fluidic states with the inherent advantages of passive and wireless operation. In this review, we provide a general overview on the fundamental aspects and some major advances of Rayleigh wave-based SAW sensors in sensing chemicals in a gaseous phase. In particular, we review the progress in general understanding of the SAW chemical sensing mechanism, optimization of the sensor characteristics, and the development of the sensors operational at different conditions. Based on previous publications, we suggest some appropriate sensing approaches for particular applications and identify new opportunities and needs for additional research in this area moving into the future.

SAW Sensors for Chemical Vapors and Gases.

This article describes an approach for implementing a complete computer system (CPU, RAM, I/O, and nonvolatile mass memory) on a single integrated-circuit substrate (a chip)—hence, the name “single-chip computer.” The approach presented combines advances in the field of microelectromechanical systems (MEMS) and micromagnetics with traditional low-cost very-large-scale integrated circuit style parallel lithographic manufacturing. The primary barrier to the creation of a computer on a chip is the incorporation of a high-capacity [many gigabytes (GB)] re-writable nonvolatile memory (in today’s terminology, a disk drive) into an integrated circuit (IC) manufacturing process. This article presents the following design example: a MEMS-based magnetic memory that can store over 2 GB of data in 2 cm2 of die area and whose fabrication is compatible with a standard IC manufacturing process.

David W. Greve

Papers

Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films

Reconstructions of the GaN\(0001̄\) Surface

Reconstructions of GaN(0001) and (0001̄) surfaces: Ga-rich metallic structures

SAW Sensors for Chemical Vapors and Gases.

Single-chip computers with microelectromechanical systems-based magnetic memory (invited)