D
Debin Meng
Researcher at University of Sydney
Publications - 5
Citations - 39
Debin Meng is an academic researcher from University of Sydney. The author has contributed to research in topics: Silicon carbide & Photonics. The author has an hindex of 1, co-authored 3 publications receiving 2 citations.
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Journal ArticleDOI
Integrated silicon carbide electro-optic modulator
Keith Powell,Liwei Li,Amirhassan Shams-Ansari,Jian-Fen Wang,Debin Meng,Neil Sinclair,Jiangdong Deng,Marko Loncar,Xiaoke Yi +8 more
TL;DR: In this paper , a waveguide-integrated, small form-factor, gigahertz-bandwidth modulator that operates using complementary metal-oxide-semiconductor (CMOS)-level voltages on a thin film of silicon carbide on insulator is presented.
Processing, Characterization, and Impact of Nafion Thin Film on Photonic Nanowaveguides for Humidity Sensing
Liwei Li,Xiaoyi Tian,Debin Meng,Michael A. Collins,Jianfu Wang,Robert Patterson,Linh Nguyen,Xiaoke Yi +7 more
Posted ContentDOI
Integrated silicon carbide modulator for CMOS photonics
Keith Powell,Liwei Li,Amirhassan Shams-Ansari,Jianfu Wang,Debin Meng,Neil Sinclair,Jiangdong Deng,Marko Loncar,Xiaoke Yi +8 more
Abstract:
The electro-optic modulator encodes electrical signals onto an optical carrier, and is essential for the operation of global communication systems and data centers that society demands. An ideal modulator results from scalable semiconductor fabrication and is integrable with electronics. Accordingly, it is compatible with complementary metal-oxide-semiconductor (CMOS) fabrication processes. Moreover, modulators using the Pockels effect enables low loss, ultrafast, and wide-bandwidth data transmission. Although strained silicon-based modulators could satisfy these criteria, fundamental limitations such as two-photon absorption, poor thermal stability and a narrow transparency window hinder their performance. On the other hand, as a wide bandgap semiconductor material, silicon carbide is CMOS compatible and does not suffer from these limitations. Due to its combination of color centers, high breakdown voltage, and strong thermal conductivity, silicon carbide is a promising material for CMOS electronics and photonics with applications ranging from sensors to quantum and nonlinear photonics. Importantly, silicon carbide exhibits the Pockels effect, but a modulator has not been realized since the discovery of this effect more than three decades ago. Here we design, fabricate, and demonstrate the first Pockels modulator in silicon carbide. Specifically, we realize a waveguide-integrated, small form-factor, gigahertz-bandwidth modulator that can operate using CMOS-level drive voltages on a thin film of silicon carbide on insulator. Furthermore, the device features no signal degradation and stable operation at high optical intensities (913 kW/mm2), allowing for high optical signal-to-noise ratios for long distance communications. Our work unites Pockels electro-optics with a CMOS platform to pave the way for foundry-compatible integrated photonics.
Proceedings ArticleDOI
Optimization of optical phased array antenna with grating array superlattice
TL;DR: In this article, a near half-wavelength one-dimensional (1-D) optical phased array (OPA) antenna based on a superlattice structure design approach was proposed, which overcomes conventional crosstalk problems and offers high resolution broadband beam steering while preserving a small footprint size.
Journal ArticleDOI
Optical bi-stability in cubic silicon carbide microring resonators.
Keith Powell,Jian-Fen Wang,Amirhassan Shams-Ansari,Binjin Liao,Debin Meng,Neil Sinclair,Liwei Li,Jiang Dong Deng,Marko Loncar,Xiaoke Yi +9 more
TL;DR: In this paper , the photothermal nonlinear response in suspended cubic silicon carbide (3C-SiC) and 3CSiC-on-insulator (SiCOI) microring resonators is measured.