L
Liwei Li
Researcher at University of Sydney
Publications - 65
Citations - 637
Liwei Li is an academic researcher from University of Sydney. The author has contributed to research in topics: Optical filter & Band-pass filter. The author has an hindex of 14, co-authored 58 publications receiving 497 citations.
Papers
More filters
Journal ArticleDOI
Single passband microwave photonic filter with wideband tunability and adjustable bandwidth
TL;DR: Experimental results are presented that demonstrate a single passband, flat-top radio-frequency filter response without free spectral range limitations, along with the capability of tuning the center frequency and filter bandwidth independently.
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Optoelectronic Oscillator Based Sensor Using an On-Chip Sensing Probe
TL;DR: An integrated photonic sensor based on an optoelectronic oscillator with an on-chip sensing probe that is capable of realizing highly sensitive and high-resolution optical sensing is presented in this paper.
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Programmable multiple true-time-delay elements based on a Fourier-domain optical processor
TL;DR: This is the first demonstration of multiple independently controllable true-time-delay lines for microwave photonic systems, based on a WDM parallel signal processing approach in conjunction with a diffraction-based Fourier-domain optical signal processor.
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Silicon-on-Insulator Dual-Ring Notch Filter for Optical Sideband Suppression and Spectral Characterization
TL;DR: In this paper, a new optical single-sideband (OSSB) modulation technique for wideband microwave photonic applications is presented, which is based on an integrated silicon-on-insulator dual-ring structure that exhibits weak electromagnetically induced transparency-like notch filter characteristics.
Journal ArticleDOI
Integrated silicon carbide electro-optic modulator
Keith Powell,Liwei Li,Amirhassan Shams-Ansari,Jian-Fen Wang,Debin Meng,Neil Sinclair,Jiangdong Deng,Marko Loncar,Xiaoke Yi +8 more
TL;DR: In this paper , a waveguide-integrated, small form-factor, gigahertz-bandwidth modulator that operates using complementary metal-oxide-semiconductor (CMOS)-level voltages on a thin film of silicon carbide on insulator is presented.