In this paper, we report a systematic investigation of band-edge photoluminescence for Cd1-xMnxTe crystals grown by the vertical Bridgman method. The near-band-edge emissions of neutral acceptor-bound excitons (labeled as L1) were systematically investigated as a function of temperature and of alloy composition. The parameters that describe the temperature variation of the energy were evaluated by the semiempirical Varshni relation. From the temperature dependence of the full width at half maximum of the L1 emission line, the broadening factors Γ(T) were determined from the fit to the data. The activation energies of thermal quenching were obtained for the L1 peak from the temperature dependence of the bound exciton peaks and were found to decrease with increasing Mn concentration.

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Photoluminescence characteristics of Cd1-xMnxTe single crystals grown by the vertical Bridgman method.

Growth and characterization of In doped Cd0.8Mn0.2Te single crystal

DX centres in CdZnTe:Cl and their applications

Growth and characterization of CdMnTe and CdZnTe polycrystalline thin films for solar cells

Diffraction gratings have been encoded in bulk Cd(08)Zn(02)Te:In samples by near-band-gap excitation The photoinduced index change is associated with persistent photoconductivity resulting from ionization of DX centers The gratings have a thickness of 17 mm, as evinced by Bragg selectivity during the readout process Encoded grating are shown to be persistent for sufficiently low temperatures and are not erased by subsequent writing of more gratings

Thick plasma gratings using a local photorefractive effect in CdZnTe:In

The introduction of phosphorus and arsenic dopants into bulk Cd1−xMnxTe crystals grown by the Bridgman–Stockbarger technique has been studied with respect to the resulting electrical and optical properties. Uncompensated acceptor concentrations as high as 1015–1016 cm−3 are obtained. Samples with a Mn composition in the range 0.10<x<0.30, both as‐grown and annealed, are studied. Hall‐effect and resistivity measurements are used to determine carrier concentrations, mobilities, and acceptor activation energies. A combination of room‐temperature transmittance and reflectance measurements over the spectral range from the ultraviolet to the far infrared has been used to gain information concerning structural quality and point defects. Low‐temperature photoluminescence measurements (1.6–5 K) are used to determine optical quality and excitonic energies. The effect of alloy broadening on luminescence linewidth is calculated and compared with measured values.

Electrical and optical properties of P-and As-doped Cd1−xMnxTe

Close-spaced isothermal vapor phase epitaxy (VPE) was used to grow quaternary Hg1−x−yCdxZnyTe epillayers on Cd1−zZnzTe substrates. Composition, resistivity, and carrier concentration depth profiles were determined in the epilayers. p-n junctions were produced from material with appropriate properties using the Hg diffusion method. The junctions showed excellent I-V characteristics and high spectral detectivities.

Hg1−x−yCdxZnyTe: Growth, Properties and Potential for Infrared Detector Applications

The introduction of phosphorus and arsenic dopants into bulk Cd1−xMnx Te crystals grown by the Bridgman-Stockbarger technique has been studieA-with respect to the resulting optical properties. Samples with a Mn composition in the range 0.10 < x < 0.30, both as-grown and annealed, were investigated. A combination of room temperature transmittance and reflectance measurements over the spectral range from the ultraviolet to the far infrared has been used to gain information concerning the structural quality of the samples. Low temperature photoluminescence measurements (1.6−5 K) were used to determine optical quality and excitonic energies.

Debra L. Kaiser

Papers

Electrical and optical properties of P-and As-doped Cd1−xMnxTe

Hg1−x−yCdxZnyTe: Growth, Properties and Potential for Infrared Detector Applications

Optical Properties of Doped Cd1−xMnxTe