D
Didier Decoster
Researcher at Centre national de la recherche scientifique
Publications - 190
Citations - 1498
Didier Decoster is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Photodiode & Photodetector. The author has an hindex of 19, co-authored 190 publications receiving 1446 citations. Previous affiliations of Didier Decoster include university of lille & Lille University of Science and Technology.
Papers
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Journal ArticleDOI
High performance evanescent edge coupled waveguide unitraveling-carrier photodiodes for >40-gb/s optical receivers
M. Achouche,V. Magnin,Joseph Harari,Francois Lelarge,Estelle Derouin,Christophe Jany,D. Carpentier,Fabrice Blache,Didier Decoster +8 more
TL;DR: In this paper, a low-cost high-bandwidth and high-responsivity evanescent waveguide unitravelling-carrier photodiode (PD) fabricated using all 2-in InP processing including on-wafer mirrors and coating.
Journal ArticleDOI
Improving thermal stability of opto-electronic oscillators
M. Kaba,H.-W. Li,Afshin S. Daryoush,Jean-Pierre Vilcot,Didier Decoster,Jean Chazelas,Géraud Bouwmans,Yves Quiquempois,Francois Deborgies +8 more
TL;DR: In this article, the authors provide an overview of close-in carrier phase noise and temperature stability of various oscillators in microwave systems, using acoustic, electromagnetic, and optical technologies.
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Radiofrequency transmission of 32-QAM signals over multimode fibre for distributed antenna system applications
TL;DR: In this article, high frequency, narrowband radio transmission over multimode fiber is shown to be possible with performance comparable to singlemode fiber using low-cost lasers and photodiodes.
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Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy
Arnaud Stolz,Eunjung Cho,Elhadj Dogheche,Yidir Androussi,David Troadec,Dimitris Pavlidis,Didier Decoster +6 more
TL;DR: In this article, the waveguide properties for wide bandgap gallium nitride (GaN) structures grown by metal organic vapor phase epitaxy on sapphire using a AlN/GaN short period superlattice (SPS) buffer layer system were reported.
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Temperature effects on high-gain photoconductive detectors
TL;DR: In this paper, gain measurements on N-type GaAs planar photoresistors have been performed against temperature, for various light powers, and a strong dependence of gain on temperature has been shown and interpreted in terms of trapping effects.