Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

Fast parallel algorithms for short-range molecular dynamics

2.3. Evaluation of Photocatalytic Water Splitting 6507 2.3.1. Photocatalytic Activity 6507 2.3.2. Photocatalytic Stability 6507 3. UV-Active Photocatalysts for Water Splitting 6507 3.1. d0 Metal Oxide Photocatalyts 6507 3.1.1. Ti-, Zr-Based Oxides 6507 3.1.2. Nb-, Ta-Based Oxides 6514 3.1.3. W-, Mo-Based Oxides 6517 3.1.4. Other d0 Metal Oxides 6518 3.2. d10 Metal Oxide Photocatalyts 6518 3.3. f0 Metal Oxide Photocatalysts 6518 3.4. Nonoxide Photocatalysts 6518 4. Approaches to Modifying the Electronic Band Structure for Visible-Light Harvesting 6519

Semiconductor-based Photocatalytic Hydrogen Generation

Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

Polarity discontinuities at the interfaces between different crystalline materials (heterointerfaces) can lead to nontrivial local atomic and electronic structure, owing to the presence of dangling bonds and incomplete atomic coordinations. These discontinuities often arise in naturally layered oxide structures, such as the superconducting copper oxides and ferroelectric titanates, as well as in artificial thin film oxide heterostructures such as manganite tunnel junctions. If polarity discontinuities can be atomically controlled, unusual charge states that are inaccessible in bulk materials could be realized. Here we have examined a model interface between two insulating perovskite oxides--LaAlO3 and SrTiO3--in which we control the termination layer at the interface on an atomic scale. In the simple ionic limit, this interface presents an extra half electron or hole per two-dimensional unit cell, depending on the structure of the interface. The hole-doped interface is found to be insulating, whereas the electron-doped interface is conducting, with extremely high carrier mobility exceeding 10,000 cm2 V(-1) s(-1). At low temperature, dramatic magnetoresistance oscillations periodic with the inverse magnetic field are observed, indicating quantum transport. These results present a broad opportunity to tailor low-dimensional charge states by atomically engineered oxide heteroepitaxy.

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Trust: The Social Virtues and the Creation of Prosperity

Weed control is a crucial practice not only in organic farming, but also in modern agriculture because it can lead to loss in crop yield. In general, weed is distributed in patches heterogeneously in the field. These patches vary in size, shape, and density. Thus, it would be efficient if chemicals are sprayed on these patches rather than spraying uniformly in the field, which can pollute the environment and be cost prohibitive. In this sense, weed detection could be beneficial for sustainable agriculture. Studies have been conducted to detect weed patches in the field using remote sensing technologies, which can be classified into a method using image segmentation based on morphology and a method with vegetative indices based on the wavelength of light. In this study, the latter methodology has been used to detect the weed patches. As a result, it was found that the vegetative indices were easier to operate as it did not need any sophisticated algorithm for differentiating weeds from crop and soil as compared to the former method. Consequently, we demonstrated that the current method of using vegetative index is accurate enough to detect weed patches, and will be useful for farmers to control weeds with minimal use of chemicals and in a more precise manner.

Case Study: Cost-effective Weed Patch Detection by Multi-Spectral Camera Mounted on Unmanned Aerial Vehicle in the Buckwheat Field

The electrical properties of Ag Schottky contacts to hydrothermally-grown polar (Zn- and Opolar) and nonpolar (m-plane) bulk ZnO were investigated. Ohmic-like behavior for Zn-polar ZnO and rectifying behaviors for O-polar and m-plane ZnO were observed from current-voltage (I–V ) measurements. Schottky contacts to O-polar ZnO were found to have higher barrier heights and lower ideality factors than those to m-plane ZnO. Higher series resistances were found for both the Zn-polar and the m-plane ZnO compared to the O-polar ZnO probably due to the presence of the interfacial layer and interface states. The homogeneous barrier heights obtained from linear fitting to the effective barrier height vs. ideality factor plots were similar to those obtained from capacitance-voltage (C–V ) measurements. A higher degree of oxidation at the Ag-ZnO interface might occur for O-polar ZnO than for m-plane ZnO, increasing the barrier heights. The large dispersion in the capacitance for m-plane ZnO was related to the excess capacitance due to the interface states.

Electrical properties of Ag Schottky contacts to hydrothermally-grown polar and nonpolar bulk ZnO

We carried out microscale and nanoscale investigations of the electrical properties of Pt/a-plane n-type GaN Schottky contacts. Using the thermionic emission (TE) model, we observed that both the barrier heights and ideality factors varied from diode to diode with a linear relationship between them, indicating a spatial fluctuation of barrier height. The thermionic field emission (TFE) model produced a better fit to the experimental current-voltage data than the TE model, which suggested that tunneling, probably due to the presence of a large number of surface defects, played an important role in the Pt/a-plane n-type GaN Schottky contacts. A two-dimensional current map of the Schottky junctions using conductive atomic force microscopy revealed an inhomogeneous spatial current distribution, which confirmed the existence of an inhomogeneous barrier in the Schottky diodes.

Observation of Barrier Inhomogeneity in Pt/ a -plane n-type GaN Schottky Contacts

A video call terminal, a mobile phone and a control method thereof are provided The video call terminal includes a first communication unit configured to conduct a video call with a second terminal through an Internet protocol (IP) network; a second communication unit configured to communicate with a mobile phone; and a controller configured to transmit first network information of the video call terminal to the mobile phone, receive second network information of the second terminal from the mobile phone, and control the video call with the second terminal using at least one of the first and second network information

Dong-Wook Kim

Papers

Case Study: Cost-effective Weed Patch Detection by Multi-Spectral Camera Mounted on Unmanned Aerial Vehicle in the Buckwheat Field

Electrical properties of Ag Schottky contacts to hydrothermally-grown polar and nonpolar bulk ZnO

Observation of Barrier Inhomogeneity in Pt/ a -plane n-type GaN Schottky Contacts

Video call terminal, mobile phone and control method thereof

Electrode dependence of resistance switching in NiO thin films