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Dongbin Shin

Researcher at Ulsan National Institute of Science and Technology

Publications -  50
Citations -  2616

Dongbin Shin is an academic researcher from Ulsan National Institute of Science and Technology. The author has contributed to research in topics: Ferroelectricity & Graphene. The author has an hindex of 17, co-authored 39 publications receiving 2001 citations. Previous affiliations of Dongbin Shin include Max Planck Society.

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Nitrogenated holey two-dimensional structures.

TL;DR: A layered two-dimensional network structure that possesses evenly distributed holes and nitrogen atoms and a C2N stoichiometry in its basal plane and has potential for use in practical applications is reported.
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Two-dimensional polyaniline (C3N) from carbonized organic single crystals in solid state

TL;DR: The synthesis of 2D PANI is described via the direct pyrolysis of hexaaminobenzene trihydrochloride single crystals in solid state and contains uniformly distributed nitrogen atoms for multifunctionality; hence, it is anticipated that 2d PANI has strong potential, from wet chemistry to device applications, beyond linear PANI and other 2D materials.
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Direct nitrogen fixation at the edges of graphene nanoplatelets as efficient electrocatalysts for energy conversion

TL;DR: By dry ball-milling graphite with N2, this work has discovered a simple, but versatile, scalable and eco-friendly, approach to direct fixation of N2 at the edges of graphene nanoplatelets (GnPs) with superb catalytic performance in both dye-sensitized solar cells and fuel cells to replace conventional Pt-based catalysts for energy conversion.
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Metal-free Ketjenblack incorporated nitrogen-doped carbon sheets derived from gelatin as oxygen reduction catalysts.

TL;DR: Ketjenblack incorporated nitrogen-doped carbon sheets derived from gelatin and apply these easily scalable materials as metal-free electrocatalysts for ORR demonstrate highly comparable catalytic activity for OrR as well as better durability than commercial Vulcan carbon supported Pt catalysts in alkaline media.
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Nitrogen-Doped Graphene Nanoplatelets from Simple Solution Edge-Functionalization for n-Type Field-Effect Transistors

TL;DR: A simple but efficient method for preparing nitrogen-doped graphene nanoplatelets via wet-chemical reactions is reported, finding hiGO and hpGO to display the n-type field-effect transistor behavior with a charge neutral point located at around -16 V.