Over the past three decades a new spectroscopic technique with unique possibilities has emerged. Based on coherent and time-resolved detection of the electric field of ultrashort radiation bursts in the far-infrared, this technique has become known as terahertz time-domain spectroscopy (THz-TDS). In this review article the authors describe the technique in its various implementations for static and time-resolved spectroscopy, and illustrate the performance of the technique with recent examples from solid-state physics and physical chemistry as well as aqueous chemistry. Examples from other fields of research, where THz spectroscopic techniques have proven to be useful research tools, and the potential for industrial applications of THz spectroscopic and imaging techniques are discussed.

Terahertz spectroscopy and imaging – Modern techniques and applications

Time-resolved, pulsed terahertz spectroscopy has developed into a powerful tool to study charge carrier dynamics in semiconductors and semiconductor structures over the past decades. Covering the energy range from a few to about 100 meV, terahertz radiation is sensitive to the response of charge quasiparticles, e.g., free carriers, polarons, and excitons. The distinct spectral signatures of these different quasiparticles in the THz range allow their discrimination and characterization using pulsed THz radiation. This frequency region is also well suited for the study of phonon resonances and intraband transitions in low-dimensional systems. Moreover, using a pump-probe scheme, it is possible to monitor the nonequilibrium time evolution of carriers and low-energy excitations with sub-ps time resolution. Being an all-optical technique, terahertz time-domain spectroscopy is contact-free and noninvasive and hence suited to probe the conductivity of, particularly, nanostructured materials that are difficult or impossible to access with other methods. The latest developments in the application of terahertz time-domain spectroscopy to bulk and nanostructured semiconductors are reviewed.

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Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy

Within the last several years, the field of terahertz science and technology has changed dramatically. Many new advances in the technology for generation, manipulation, and detection of terahertz radiation have revolutionized the field. Much of this interest has been inspired by the promise of valuable new applications for terahertz imaging and sensing. Among a long list of proposed uses, one finds compelling needs such as security screening and quality control, as well as whimsical notions such as counting the almonds in a bar of chocolate. This list has grown in parallel with the development of new technologies and new paradigms for imaging and sensing. Many of these proposed applications exploit the unique capabilities of terahertz radiation to penetrate common packaging materials and provide spectroscopic information about the materials within. Several of the techniques used for terahertz imaging have been borrowed from other, more well established fields such as x-ray computed tomography and synthetic aperture radar. Others have been developed exclusively for the terahertz field, and have no analogies in other portions of the spectrum. This review provides a comprehensive description of the various techniques which have been employed for terahertz image formation, as well as discussing numerous examples which illustrate the many exciting potential uses for these emerging technologies.

https://iopscience.iop.org/article/10.1088/0034-4885/70/8/R02/pdf

Imaging with terahertz radiation

The use of terahertz pulses for imaging has opened new possibilities for scientific and industrial applications in the terahertz frequency range. In this article, we describe the technology necessary to perform terahertz "T-ray" imaging, novel imaging techniques, and commercial applications of T-ray imaging.

T-ray imaging

This article provides an overview and illustrative examples of how the electric and magnetic fields of intense terahertz transients can be used to resonantly, and even nonresonantly, control matter and light. It discusses the fundamental interaction mechanisms of intense terahertz radiation with matter.

Resonant and nonresonant control over matter and light by intense terahertz transients

A novel material deposited by molecular beam epitaxy at low substrate temperatures using Ga and As4 beam fluxes has been used as the active layer for a high‐speed photoconductive optoelectronic switch. The high‐speed photoconductive performance of the material was assessed by fabricating two devices: an Auston switch and a photoconductive‐gap switch with a coplanar transmission line. In a coplanar transmission line configuration, the speed of response is 1.6 ps (full width at half maximum) and the response is 10 to 100 times greater than that of conventional photoconductive switches. Since the material is compatible with GaAs discrete device and integrated circuit technologies, this photoconductive switch may find extensive applications for high‐speed device and circuit testing.

Picosecond GaAs‐based photoconductive optoelectronic detectors

We have generated sub-single-cycle pulses of electromagnetic radiation with pulse energies as high as 0.8 μJ and pulse lengths < 500 fs. The 10-dB width of the spectrum is 1.5 THz. The transmitter is a GaAs wafer illuminated at normal incidence by 120-fs, 770-nm pulses from a Ti:sapphire chirped-pulse amplifier system while a pulsed electric field is applied across the surface. The pulse energy of the far-infrared radiation is found to be a quadratic function of bias field and a nonmonotonic function of laser intensity.

Generation of high-power sub-single-cycle 500-fs electromagnetic pulses.

Summary form only given. Fast electrical transients and terahertz (THz) radiation are generated when biased coplanar striplines are excited within the gap by short laser pulses. This generation process is particularly efficient when the excitation is carried out close to the anode and has been observed in a number of material systems. In this work we go one step further and use electric field singularities in metal-semiconductor microstructures to generate efficient THz radiation and electrical transients.

Terahertz emission from electric field singularities in biased semiconductors

We report the first interferometric characterization of freely propagating, subpicosecond, far‐infrared (FIR) light pulses. FIR light was generated via short pulse photoexcitation of a semi‐insulating InP wafer. The half width of the intensity interferogram was 230 fs. The FIR light contained frequency components from 3 to 150 cm−1.

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Interferometric characterization of 160 fs far-infrared light pulses

The algorithm suitable for the computer-aided design of transmission lines is used to model the propagation of picosecond and subpicosecond electrical signals on superconducting planar transmission lines. Included in the computation of a complex propagation factor are geometry-dependent modal dispersion and the frequency-dependent attenuation and phase velocity which arise as a result of the presence of a superconductor in the structure. The results of calculations are presented along with a comparison to experimental data. The effects of modal dispersion and the complex surface conductivity of the superconductor are demonstrated, with the conclusion that it is necessary to incorporate both phenomena for accurate modeling of transient propagation in strip transmission lines. >

Douglas R. Dykaar

Papers

Picosecond GaAs‐based photoconductive optoelectronic detectors

Generation of high-power sub-single-cycle 500-fs electromagnetic pulses.

Terahertz emission from electric field singularities in biased semiconductors

Interferometric characterization of 160 fs far-infrared light pulses

Propagation model for ultrafast signals on superconducting dispersive striplines