E
E. B. Olshanetsky
Researcher at Russian Academy of Sciences
Publications - 70
Citations - 683
E. B. Olshanetsky is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum well & Topological insulator. The author has an hindex of 13, co-authored 69 publications receiving 622 citations. Previous affiliations of E. B. Olshanetsky include Centre national de la recherche scientifique & Novosibirsk State University.
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Journal ArticleDOI
Two-dimensional electron-hole system in a HgTe-based quantum well
TL;DR: A two-dimensional electron-hole system consisting of light highmobility electrons with a density of Ns = (4−7) × 1010 cm−2 and a mobility of μn = ( 4−6) × 105 cm2/V s and heavier low-mobility holes with density of Ps = (0.7−1.6)-1.
Journal ArticleDOI
Temperature dependence of the resistance of a two-dimensional topological insulator in a HgTe quantum well
G. M. Gusev,Z. D. Kvon,E. B. Olshanetsky,Andrew Levin,Yu. Krupko,J. C. Portal,J. C. Portal,J. C. Portal,N. N. Mikhailov,S. A. Dvoretsky +9 more
TL;DR: In this paper, resistance measurements in HgTe wells with an inverted band structure near the charge neutrality point (CNP), where the system is expected to be a two-dimensional topological insulator with a dominant edge states contribution, were reported.
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Persistence of a two-dimensional topological insulator state in wide HgTe quantum wells.
E. B. Olshanetsky,Z. D. Kvon,G. M. Gusev,Andrew Levin,O. E. Raichev,N. N. Mikhailov,S. A. Dvoretsky +6 more
TL;DR: Experimental studies of electron transport in wide (14 nm) HgTe quantum wells confirm the persistence of a two-dimensional topological insulator state reported previously for narrower wells, where it was justified theoretically.
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Two-dimensional electron-hole system in HgTe-based quantum wells with surface orientation (112)
Z. D. Kvon,E. B. Olshanetsky,E. G. Novik,D. A. Kozlov,N. N. Mikhailov,I. O. Parm,S. A. Dvoretsky +6 more
TL;DR: In this paper, a two-dimensional electron-hole system has been shown to exist in 20 nm thick HgTe quantum wells with the orientation (112), and it was shown that the semimetallic state is a universal property of wide-HgTe-based quantum well with an inverted energy band structure that is independent of surface orientation.
Journal ArticleDOI
Scattering processes in a two-dimensional semimetal
E. B. Olshanetsky,Z. D. Kvon,Z. D. Kvon,M. V. Entin,L. I. Magarill,L. I. Magarill,Nikolay N. Mikhailov,I. O. Parm,Sergey A. Dvoretsky +8 more
TL;DR: In this paper, the scattering mechanisms in a two-dimensional semimetal based on a HgTe quantum well, where the electron and hole densities are controlled over a wide range by applying the gate voltage, have been studied.