Z
Z. D. Kvon
Researcher at Novosibirsk State University
Publications - 136
Citations - 1532
Z. D. Kvon is an academic researcher from Novosibirsk State University. The author has contributed to research in topics: Electron & Magnetic field. The author has an hindex of 22, co-authored 121 publications receiving 1365 citations.
Papers
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Journal ArticleDOI
Transport in disordered two-dimensional topological insulators
G. M. Gusev,Z. D. Kvon,O. A. Shegai,N. N. Mikhailov,Sergey A. Dvoretsky,J. C. Portal,J. C. Portal,J. C. Portal +7 more
TL;DR: In this article, the transport properties of the semiconductor HgTe-based quantum well, recently shown to be a two-dimensional topological insulator, are studied experimentally in the diffusive regime.
Journal ArticleDOI
Cyclotron-resonance-assisted photocurrents in surface states of a three-dimensional topological insulator based on a strained high-mobility HgTe film
Kathirn-Maria Dantscher,D. A. Kozlov,Peter Olbrich,Christina Zoth,Philipp Faltermeier,Moritz Lindner,G. V. Budkin,Sergey Tarasenko,Sergey Tarasenko,Vassilij Belkov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky,Dieter Weiss,Bernd Jenichen,Sergey Ganichev +15 more
TL;DR: In this article, the cyclotron-resonance-induced photocurrents, excited by continuous wave terahertz radiation, in a three-dimensional topological insulator (TI) based on an 80-nm strained HgTe film were observed.
Journal ArticleDOI
Temperature dependence of the resistance of a two-dimensional topological insulator in a HgTe quantum well
G. M. Gusev,Z. D. Kvon,E. B. Olshanetsky,Andrew Levin,Yu. Krupko,J. C. Portal,J. C. Portal,J. C. Portal,N. N. Mikhailov,S. A. Dvoretsky +9 more
TL;DR: In this paper, resistance measurements in HgTe wells with an inverted band structure near the charge neutrality point (CNP), where the system is expected to be a two-dimensional topological insulator with a dominant edge states contribution, were reported.
Journal ArticleDOI
Persistence of a two-dimensional topological insulator state in wide HgTe quantum wells.
E. B. Olshanetsky,Z. D. Kvon,G. M. Gusev,Andrew Levin,O. E. Raichev,N. N. Mikhailov,S. A. Dvoretsky +6 more
TL;DR: Experimental studies of electron transport in wide (14 nm) HgTe quantum wells confirm the persistence of a two-dimensional topological insulator state reported previously for narrower wells, where it was justified theoretically.