N
N. N. Mikhailov
Researcher at Novosibirsk State University
Publications - 139
Citations - 1745
N. N. Mikhailov is an academic researcher from Novosibirsk State University. The author has contributed to research in topics: Quantum well & Topological insulator. The author has an hindex of 21, co-authored 136 publications receiving 1477 citations.
Papers
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Journal ArticleDOI
Growth of HgTe Quantum Wells for IR to THz Detectors
S. A. Dvoretsky,N. N. Mikhailov,Yu. Sidorov,V. A. Shvets,Sergey Danilov,B. Wittman,Sergey Ganichev +6 more
TL;DR: In this paper, the variations of ellipsometric parameters in the ψ-Δ plane were represented by smooth broken curves during HgTe QW growth with abrupt composition changes.
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Transport in disordered two-dimensional topological insulators
G. M. Gusev,Z. D. Kvon,O. A. Shegai,N. N. Mikhailov,Sergey A. Dvoretsky,J. C. Portal,J. C. Portal,J. C. Portal +7 more
TL;DR: In this article, the transport properties of the semiconductor HgTe-based quantum well, recently shown to be a two-dimensional topological insulator, are studied experimentally in the diffusive regime.
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Growth of Hg1-xCdxTe nanostructures by molecular beam epitaxy with ellipsometric control
N. N. Mikhailov,R.N. Smirnov,S.A. Dvoretsky,Yu.G. Sidorov,V. A. Shvets,E. V. Spesivtsev,S. V. Rykhlitski +6 more
TL;DR: In this paper, the authors demonstrate the growth of potential barriers, wells and periodic nanostructures on the basis of Hg1-xCdxTe by molecular beam epitaxy.
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Cyclotron-resonance-assisted photocurrents in surface states of a three-dimensional topological insulator based on a strained high-mobility HgTe film
Kathirn-Maria Dantscher,D. A. Kozlov,Peter Olbrich,Christina Zoth,Philipp Faltermeier,Moritz Lindner,G. V. Budkin,Sergey Tarasenko,Sergey Tarasenko,Vassilij Belkov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky,Dieter Weiss,Bernd Jenichen,Sergey Ganichev +15 more
TL;DR: In this article, the cyclotron-resonance-induced photocurrents, excited by continuous wave terahertz radiation, in a three-dimensional topological insulator (TI) based on an 80-nm strained HgTe film were observed.
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Temperature dependence of the resistance of a two-dimensional topological insulator in a HgTe quantum well
G. M. Gusev,Z. D. Kvon,E. B. Olshanetsky,Andrew Levin,Yu. Krupko,J. C. Portal,J. C. Portal,J. C. Portal,N. N. Mikhailov,S. A. Dvoretsky +9 more
TL;DR: In this paper, resistance measurements in HgTe wells with an inverted band structure near the charge neutrality point (CNP), where the system is expected to be a two-dimensional topological insulator with a dominant edge states contribution, were reported.