The recent evolution of quantum-well self-electrooptic effect devices (SEEDs) for application in free-space optical switching and computing systems is reviewed. Requirements of these systems have stimulated the development of devices usable in large systems of cascaded devices (the symmetric SEED), large two-dimensional arrays of these devices with improved physical performance, logically smarter extensions of these devices (logic-SEEDs), and devices integrating electronic transistors with quantum-well modulators and detectors for both reducing the required optical energies and increasing functionality. This progress and its implications for future developments are summarized. >

Evolution of the SEED technology: bistable logic gates to optoelectronic smart pixels

We demonstrate wavelength-division multiplexing with a single broadband femtosecond source by slicing the 3.7-THz spectral bandwidth of 85-fs laser pulses into 16 channels that are modulated individually.

/pdf/wavelength-division-multiplexing-with-femtosecond-pulses-2vrb4ccqe8.pdf

Wavelength-division multiplexing with femtosecond pulses

Planar optics is an approach to build integrated free-space optical systems on single substrates. Computer-aided design, lithographic fabrication, and micro-bonding techniques are used to package the optics in a compact way. This paper reviews recent work on planar optics. It discusses various aspects of the fabrication, the design, and the application of planar optics as an interconnection technology for optoelectronic computing and switching systems. >

Planar packaging of free-space optical interconnections

The structure, processing, and performance of arrays of integrated field-effect transistor-self-electrooptic effects devices (FET-SEEDs) consisting of doped-channel field-effect transistors, multiple quantum-well (MQW) modulators, and p-i-n MQW detectors are discussed. The performance of the FETs and SEEDs such as g/sub m/ and contrast, is equivalent to that obtained when they are made separately. Typical values are g/sub m/=80 mS/mm and contrast of 3. The largest arrays contain 128 circuits. The circuits operate at speeds as fast as 500 Mb/s, with optical input switching energy of approximately=400 fJ. At 170 Mb/s, the required optical input switching energy is approximately=70 fJ. This optical energy is at least a factor of 20 less than for symmetric SEEDs (S-SEEDs) with the same optical window sizes. Hence, FET-SEEDs provide superior performance compared to conventional S-SEEDs. >

Batch fabrication and operation of GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electrooptic effect device (FET-SEED) smart pixel arrays

We describe our work on the design and testing of optical receivers for use in optoelectronic VLSI. The local nature of the optoelectronic VLSI system permits novel receiver designs, incorporating multiple optical beams and/or synchronous operation, while the requirement of realizing large numbers of receivers on a single chip severely constrains area and power consumption. We describe four different receiver designs, and their different operating modes. Results include 1-Gb/s high-impedance, two-beam diode-clamped FET-SEED receivers, single and dual-beam transimpedance receivers realized with a hybrid attachment of multiple-quantum well devices to 0.8-/spl mu/m linewidth CMOS operating to 1 Gb/s, and synchronous sense-amplifier-based optical receivers with low (/spl sim/1 mW) power consumption. Finally, we introduce a measure of receiver performance that includes area and power consumption.

Optical receivers for optoelectronic VLSI

The authors experimentally demonstrate the operation of a fully integrated optoelectronic circuit with optical input and output consisting of a p-i-n photodetector and load resistor, a depletion-mode GaAs-Al/sub x/Ga/sub 1-x/As heterostructure field-effect transistor (HFET) and self-biased HFET load, together with an output GaAs-Al/sub x/Ga/sub 1-x/As multiple quantum-well optical modulator. All elements have been monolithically integrated within a 50- mu m*50- mu m area. A low optical power input causes a modulation of a higher-power output, demonstrating optical signal amplification. >

Operation of a fully integrated GaAs-Al/sub x/Ga/sub 1-x/As FET-SEED: a basic optically addressed integrated circuit

The authors have demonstrated a smart pixel prototype field-effect-transistor-self-electrooptic-effect-device (FET-SEED) integrated optoelectronic amplifier utilizing process technology suitable for flexible design and fabrication of high-yield optoelectronic circuits. A single MBE growth sequence provides for quantum-well modulators, photodiodes, doped channel MIS-like field-effect transistors (DMTs), and resistors. The device dimensions are controlled in a planar technology using ion implantation and selective plasma etching for isolation and contacting. Results demonstrate optical amplification in a fully integrated circuit. This technology will enable increased functionality by providing digital electronic processing between optical input and output. >

Batch fabrication and structure of integrated GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electro-optic effect devices (FET-SEED's)

We experimentally demonstrate the operation of a fully integrated optoelectronic circuit with optical input and output consisting of a p-i-n photodetector and load resistor, a depletion mode GaAs-AI,Ga, - ,As heterostructure field effect transistor (HFET) and self-biased HFET load, together with an output GaAs-AI,Ga, - ,As multiple quantum-well optical mod- ulator. All elements have been monolithically integrated within a 50 x 50 pm area. A low optical power input causes a modula- tion of a higher power output, demonstrating optical signal amplification.

http://ieeexplore.ieee.org/iel3/68/3812/00141986.pdf

SEED: A Basic Optically Addressed Integrated Circuit

http://ieeexplore.ieee.org/iel4/1140/7486/00697505.pdf

Batch Fabrication And Testing Of Fet-seed Smart Pixel Arrays

https://ieeexplore.ieee.org/iel4/1140/7486/00697504.pdf

E.J. Laskowski

Papers

Operation of a fully integrated GaAs-Al/sub x/Ga/sub 1-x/As FET-SEED: a basic optically addressed integrated circuit

Batch fabrication and structure of integrated GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electro-optic effect devices (FET-SEED's)

SEED: A Basic Optically Addressed Integrated Circuit

Batch Fabrication And Testing Of Fet-seed Smart Pixel Arrays

GaAs/AlGaAs Fet-seed Smart Pixels With Several Transistors