G
G. J. Przybylek
Researcher at AT&T
Publications - 9
Citations - 167
G. J. Przybylek is an academic researcher from AT&T. The author has contributed to research in topics: Field-effect transistor & Integrated circuit. The author has an hindex of 6, co-authored 9 publications receiving 167 citations. Previous affiliations of G. J. Przybylek include Bell Labs.
Papers
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Journal ArticleDOI
Operation of a fully integrated GaAs-Al/sub x/Ga/sub 1-x/As FET-SEED: a basic optically addressed integrated circuit
T.K. Woodward,L.M.F. Chirovsky,Anthony L. Lentine,L.A. D'Asaro,E.J. Laskowski,M.W. Focht,G. Guth,S.-S. Pei,F. Ren,G. J. Przybylek,L.E. Smith,R.E. Leibenguth,M.T. Asom,R.F. Kopf,J.M. Kuo,Mark D. Feuer +15 more
TL;DR: In this article, a fully integrated optoelectronic circuit with optical input and output consisting of a p-i-n photodetector and load resistor, a depletion-mode GaAs-Al/sub x/Ga/sub 1-x/As heterostructure field-effect transistor (HFET) and self-biased HFET load, together with an output GaAs al/sub X/GA/sub 0-1/As multiple quantum-well optical modulator, was experimentally demonstrated.
Journal ArticleDOI
Low‐voltage, high‐saturation, optically bistable self‐electro‐optic effect devices using extremely shallow quantum wells
Robert A. Morgan,Moses T. Asom,L.M.F. Chirovsky,Marlin W. Focht,K.G. Glogovsky,G. D. Guth,G. J. Przybylek,L. E. Smith,Keith W. Goossen +8 more
TL;DR: In this article, a symmetric self-electro-optic effect device (S-SEED) using extremely shallow GaAs/Al 0.04Ga0.96As multiple quantum wells is demonstrated.
Journal ArticleDOI
Diode‐clamped symmetric self‐electro‐optic effect devices with subpicojoule switching energies
Anthony L. Lentine,L.M.F. Chirovsky,Marlin W. Focht,Joseph Michael Freund,G. D. Guth,Ronald E. Leibenguth,G. J. Przybylek,L. E. Smith +7 more
TL;DR: In this article, a diode-clamped symmetric self-electro-optic effect devices (S-SEEDs) with clamping diodes connected to the center node of the devices are described.
Journal ArticleDOI
Logic self-electrooptic effect devices: quantum-well optoelectronic multiport logic gates, multiplexers, demultiplexers, and shift registers
Anthony L. Lentine,F. A. P. Tooley,Sonya L. Walker,Frederick B. McCormick,Rick L. Morrison,L.M.F. Chirovsky,M.W. Focht,Joseph Michael Freund,G.D. Guth,Ronald E. Leibenguth,G. J. Przybylek,L. E. Smith,L.A. D'Asaro,David A. B. Miller +13 more
TL;DR: Two-dimensional arrays of logic self-electrooptic effect devices (L-SEEDs), consisting of electrically connected quantum-well p-i-n diode detectors and modulators are demonstrated.
Journal ArticleDOI
Batch fabrication and structure of integrated GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electro-optic effect devices (FET-SEED's)
L.A. D'Asaro,L.M.F. Chirovsky,E.J. Laskowski,S.-S. Pei,R.E. Leibenguth,T.K. Woodward,M.W. Focht,Anthony L. Lentine,M. T. Asom,G.D. Guth,R. F. Kopf,J. M. Kuo,Stephen J. Pearton,G. J. Przybylek,Fan Ren,L.E. Smith +15 more
TL;DR: In this article, a smart pixel prototype field effect transistor-self-electrooptic-effect device (FET-SEED) integrated optoelectronic amplifier was demonstrated.