E
Edward H. Poindexter
Researcher at United States Army Research Laboratory
Publications - 118
Citations - 3819
Edward H. Poindexter is an academic researcher from United States Army Research Laboratory. The author has contributed to research in topics: Silicon & Electron paramagnetic resonance. The author has an hindex of 28, co-authored 118 publications receiving 3734 citations. Previous affiliations of Edward H. Poindexter include Electrochemical Society & United States Department of the Army.
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Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers
TL;DR: In this paper, electron spin resonance centers have been observed and compared in thermally oxidized (111) and (100) silicon wafers subjected to various processing treatments, and the quantitative proportionality of Pb spin concentration to midgap interface trap density Dit is maintained on (100), and both are lower by a factor of about 3 compared to (111).
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ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
TL;DR: The ESR Pb center has been observed in thermally oxidized singlecrystal silicon wafers, and compared with oxide fixed charge Qss and oxidation-induced interface states Nst.
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Electronic traps and Pb centers at the Si/SiO2 interface: Band‐gap energy distribution
Edward H. Poindexter,G. J. Gerardi,M.‐E. Rueckel,Philip J. Caplan,Noble M. Johnson,David K. Biegelsen +5 more
TL;DR: Energy distribution of Pb centers (⋅Si≡Si3) and electronic traps (Dit) at the Si/SiO2 interface in metal-oxide-silicon (MOS) structures was examined by electric-field-controlled electron paramagnetic resonance (EPR) and capacitancevoltage (C‐V) analysis on the same samples.
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Interface traps and Pb centers in oxidized (100) silicon wafers
TL;DR: In this paper, the band-gap energy distribution of Pb centers on oxidized (100) Si wafers has been determined and compared with interface electrical trap density Dit.
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Characterization of Si/SiO2 interface defects by electron spin resonance
TL;DR: In this article, the authors present the present status and historical development of electron spin resonance (ESR) application to the Si/SiO 2 system, and include a background of relevant ESR research on other materials systems.