Showing papers by "Enakshi Bhattacharya published in 1988"
TL;DR: In this article, the authors investigated the effect of microstructure on light-induced degradation in hydrogenated amorphous silicon (aSi:H) and found that samples with more microstructures, and also more bonded hydrogen, show an increased lightinduced effect.
Abstract: Using a parameter obtained from infrared measurements of the silicon‐hydrogen stretch mode, the amout of light‐induced degradation in hydrogenated amorphous silicon (a‐Si:H) has been explored as a function of the amount of microstructure present in our samples. We find that samples with more microstructure, and also more bonded hydrogen, show an increased light‐induced effect. At the same time, the volume density of states in the initial (annealed) state remains virtually unchanged. We discuss how the present results relate to existing models proposed to describe the light‐induced effect.
162 citations
TL;DR: In this article, a windowless helium lamp is employed to assist chemical vapor deposition of hydrogenated amorphous silicon from disilane feedstock gas at a film growth rate greater than 200 A/min.
Abstract: A windowless helium lamp is employed to assist chemical vapor deposition of hydrogenated amorphous silicon from disilane feedstock gas at a film growth rate greater than 200 A/min. Material properties in this preliminary study are comparable to the best hydrogenated amorphous silicon (a‐Si:H) films produced by conventional bulk plasma CVD techniques. The amount of photoconductivity degradation under long‐time illumination is more than plasma‐deposited a‐Si‐H thin films. Photoconductivity as high as σp =4×10−4 (Ω cm)−1 has been obtained.
7 citations