Journal ArticleDOI
Microstructure and the light‐induced metastability in hydrogenated amorphous silicon
Enakshi Bhattacharya,A. H. Mahan +1 more
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In this article, the authors investigated the effect of microstructure on light-induced degradation in hydrogenated amorphous silicon (aSi:H) and found that samples with more microstructures, and also more bonded hydrogen, show an increased lightinduced effect.Abstract:
Using a parameter obtained from infrared measurements of the silicon‐hydrogen stretch mode, the amout of light‐induced degradation in hydrogenated amorphous silicon (a‐Si:H) has been explored as a function of the amount of microstructure present in our samples. We find that samples with more microstructure, and also more bonded hydrogen, show an increased light‐induced effect. At the same time, the volume density of states in the initial (annealed) state remains virtually unchanged. We discuss how the present results relate to existing models proposed to describe the light‐induced effect.read more
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Thin-Film Silicon Solar Cells
TL;DR: In this article, the current use and challenges of thin-film silicon solar cells, including conductivities and doping, the properties of microcrystalline silicon (the role of the internal electric field, shunts, series resistance problems, light trapping), tandem and multijunction solar cells (a-Si:H/a -Si: H tandems, triple-junction amorphous cells, micro-crystaline-amorphous or “micromorph” Tandems), module production (deposition of thinfilm layers, substrate materials,
Journal ArticleDOI
Review: Progress in solar cells from hydrogenated amorphous silicon
Michael Stuckelberger,Michael Stuckelberger,Rémi Biron,Nicolas Wyrsch,Franz-Josef Haug,Christophe Ballif +5 more
TL;DR: A review of the state-of-the-art of a-Si:H solar cell technology from growth and characterization of single layers to full solar cells and multijunction devices is presented in this article.
Journal ArticleDOI
Microvoids in amorphous Si1-xCx: H alloys studied by small-angle x-ray scattering
TL;DR: The microstructure of hydrogenated amorphous silicon carbon alloys has been analyzed by smallangle x-ray scattering, infrared absorption, and density measurements as discussed by the authors, and the microvoid number density increases from about 5×1019/cm3 for a •Si:H to about 4×1020/ cm3 for •Si 0.7 C 0.3 :H.
Journal ArticleDOI
High-efficiency amorphous silicon solar cells: Impact of deposition rate on metastability
Takuya Matsui,Adrien Bidiville,Keigou Maejima,Hitoshi Sai,Takashi Koida,Takashi Suezaki,Mitsuhiro Matsumoto,Kimihiko Saito,Isao Yoshida,Michio Kondo +9 more
TL;DR: The impact of varying deposition rates on the light-soaking stability of p-i-n solar cells has been investigated in this article, showing that the metastable effect persists in a-Si:H regardless of the deposition rate.
Journal ArticleDOI
Effect of microvoids on initial and light‐degraded efficiencies of hydrogenated amorphous silicon alloy solar cells
TL;DR: In this paper, a combination of infrared absorption and smallangle x-ray scattering on hydrogenated amorphous silicon alloy films and efficiency measurements of solar cells with intrinsic layers prepared under nominally identical conditions to those for the deposition of the films were observed.
References
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Journal ArticleDOI
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study.
TL;DR: In this article, the authors investigated the influence of the Staebler-Wronski effect on undoped hydrogenated amorphous silicon with electron spin resonance and photoconductivity measurements.
Journal ArticleDOI
Structural interpretation of the vibrational spectra of a-Si: H alloys
TL;DR: In this article, the ir and Raman spectra of Si: H alloys produced by plasma decomposition of Si${\mathrm{H}}_{4}$ are studied for a wide range of deposition conditions.
Journal ArticleDOI
Direct measurement of gap state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
Warren B. Jackson,Nabil M. Amer +1 more
TL;DR: In this paper, the authors measured the subgap otpical absorption of undoped, singly doped, and compensated hydrogenated amorphous silicon down to 0.6 eV using the sensitive technique of photothermal deflection spectroscopy.
Journal ArticleDOI
Infrared Spectrum and Structure of Hydrogenated Amorphous Silicon
TL;DR: In this paper, it is shown that the integrated strength of the bond stretching bands in hydrogenated amorphous silicon cannot be used to determine the hydrogen concentration because the local effective charge for ir absorption is a function of hydrogen concentration and sample preparation.
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