F
F. Adler
Researcher at University of Stuttgart
Publications - 17
Citations - 562
F. Adler is an academic researcher from University of Stuttgart. The author has contributed to research in topics: Quantum dot & Photoluminescence. The author has an hindex of 8, co-authored 17 publications receiving 555 citations.
Papers
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Journal ArticleDOI
Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dots
F. Adler,M. Geiger,A. Bauknecht,F. Scholz,Heinz Schweizer,M. H. Pilkuhn,B. Ohnesorge,Alfred Forchel +7 more
TL;DR: In this paper, the authors present experimental results concerning optical transitions and carrier dynamics (capture and relaxation) in self assembled InAs/GaAs quantum dot structures grown by metalorganic vapor phase epitaxy.
Journal ArticleDOI
Auger carrier capture kinetics in self-assembled quantum dot structures
TL;DR: In this paper, the authors established rate equations to describe Auger carrier capture kinetics in quantum dot structures, calculate Auger capture coefficients for self-assembled quantum dots, and analyze the kinetics using these equations.
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Auger carrier relaxation in self-assembled quantum dots by collisions with two-dimensional carriers
TL;DR: In this paper, the authors studied the effect of Coulomb interaction on self-assembled quantum dots and showed that the Auger effect may lead to relaxation times in the order of 1-10 ps at 2D carrier densities of 1011-1012 cm−2.
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Self-assembled InAs/GaAs quantum dots under resonant excitation
TL;DR: In this paper, the energy structure and the carrier relaxation in self-assembled InAs/GaAs quantum dots (SADs) were investigated by photoluminescence excitation spectroscopy (PLE) and at resonant excitation (below the GaAs and the wetting layer bandgap).
Journal ArticleDOI
Realization of optically pumped second-order gainn-distributed-feedback lasers
R. Hofmann,H.-P. Gauggel,U.A. Griesinger,H. Gräbeldinger,F. Adler,P. Ernst,H. Bolay,Volker Härle,Ferdinand Scholz,Heinz Schweizer,M. H. Pilkuhn +10 more
TL;DR: In this article, a room temperature distributed feedback (DFB) laser operation with emission wavelengths ranging from 389 to 399 nm was demonstrated with a GaInN/GaN double heterostructure grown by metalorganic vapor phase epitaxy.