F
F.O. Adurodija
Researcher at Mount Allison University
Publications - 30
Citations - 881
F.O. Adurodija is an academic researcher from Mount Allison University. The author has contributed to research in topics: Thin film & Pulsed laser deposition. The author has an hindex of 19, co-authored 30 publications receiving 864 citations. Previous affiliations of F.O. Adurodija include United States Department of Energy & Northumbria University.
Papers
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Journal ArticleDOI
Growth of CuInSe2 thin films by high vapour Se treatment of co-sputtered Cu-In alloy in a graphite container
TL;DR: In this article, the crystallization of CuInSe 2 thin films by high Se vapour selenization of co-sputtered Cu-In alloy precursor within a partially closed graphite container is reported.
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Electrical and structural properties of indium tin oxide films prepared by pulsed laser deposition
Hirokazu Izumi,F.O. Adurodija,Takahiro Kaneyoshi,Tsuguo Ishihara,Hideki Yoshioka,Muneyuki Motoyama +5 more
TL;DR: In this paper, the relation between electrical and structural properties of indium tin oxide (ITO) films prepared by pulsed laser deposition with and without in situ laser irradiation is examined.
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Crystallization process and electro-optical properties of In2O3 and ITO thin films
TL;DR: Amorphous indium oxide and 10-wt% SnO2 doped In2O3 (ITO) thin films were prepared by pulsed-laser deposition.
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Influence of substrate temperature on the properties of indium oxide thin films
F.O. Adurodija,Hirokazu Izumi,Tsuguo Ishihara,Hideki Yoshioka,Muneyuki Motoyama,Kensuke Murai +5 more
TL;DR: In this article, pure indium oxide and SnO2-doped In2O3 (5 and 10 wt) films were deposited on glass at different substrate temperatures (Ts) ranging from room temperature (RT=25 °C) to 350 C using pulsed laser deposition.
Journal ArticleDOI
Pulsed Laser Deposition of Low-Resistivity Indium Tin Oxide Thin Films at Low Substrate Temperature
F.O. Adurodija,Hirokazu Izumi,Tsuguo Ishihara,Hideki Yoshioka,Hiroshi Matsui,Muneyuki Motoyama +5 more
TL;DR: In this paper, Indium tin oxide (ITO) thin films were grown on SiO2 glass and silicon (Si) substrates from a 95 wt% In2O3-5 wt % SnO2 sintered ceramic target by pulsed laser deposition (PLD).