F
Fabrice Gourbilleau
Researcher at University of Caen Lower Normandy
Publications - 197
Citations - 3120
Fabrice Gourbilleau is an academic researcher from University of Caen Lower Normandy. The author has contributed to research in topics: Silicon & Photoluminescence. The author has an hindex of 29, co-authored 190 publications receiving 2909 citations. Previous affiliations of Fabrice Gourbilleau include Centre national de la recherche scientifique.
Papers
More filters
Journal ArticleDOI
Optimized conditions for an enhanced coupling rate between Er ions and Si nanoclusters for an improved 1.54-μm emission
TL;DR: In this article, the authors deal with the optimized processing conditions leading to the highest density of Si nanoclusters which play the role of sensitizing centers for the nearby Er ions within a silica matrix.
Journal ArticleDOI
Excitable Er fraction and quenching phenomena in Er-doped SiO2 layers containing Si nanoclusters
B. Garrido,C. García,S.-Y. Seo,Paolo Pellegrino,Daniel Navarro-Urrios,Nicola Daldosso,Lorenzo Pavesi,Fabrice Gourbilleau,Richard Rizk +8 more
TL;DR: In this article, the interaction between Si nanoclusters Si-nc and Er in SiO2 was investigated, and the optical characterization and modeling of this system, and its effectiveness as a gain material for optical waveguide amplifiers at 1.54 m.
Journal ArticleDOI
Structural and optical characterization of pure Si-rich nitride thin films
Olivier Debieu,Ramesh Pratibha Nalini,Julien Cardin,Xavier Portier,Jacques Perriere,Fabrice Gourbilleau +5 more
TL;DR: The specific dependence of the Si content on the structural and optical properties of O- and H-free Si-rich nitride (SiNx>1.33) thin films deposited by magnetron sputtering is investigated and a semiempirical relation between the composition and the refractive index was found.
Journal ArticleDOI
Low temperature deposition of nanocrystalline silicon carbide thin films
TL;DR: In this paper, the infrared (IR) absorption spectra and the transmission electron microscopy observations reveal an onset of crystallization at Ts as low as 300 °C and the crystalline fraction increases with Ts and reaches a value of about 60%.
Journal ArticleDOI
Absorption cross section and signal enhancement in Er-doped Si nanocluster rib-loaded waveguides
Nicola Daldosso,Daniel Navarro-Urrios,M. Melchiorri,Lorenzo Pavesi,Fabrice Gourbilleau,M. Carrada,Richard Rizk,C. García,Paolo Pellegrino,B. Garrido,L. Cognolato +10 more
TL;DR: In this article, rib-loaded waveguides were obtained by photolithographic and reactive ion etching of Er-doped silica layers containing Si nanoclusters grown by reactive sputtering.