F
Fan Ren
Researcher at Alcatel-Lucent
Publications - 52
Citations - 290
Fan Ren is an academic researcher from Alcatel-Lucent. The author has contributed to research in topics: Layer (electronics) & Semiconductor device. The author has an hindex of 11, co-authored 52 publications receiving 285 citations. Previous affiliations of Fan Ren include Bell Labs & AT&T.
Papers
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Journal ArticleDOI
The incorporation of hydrogen into III–V nitrides during processing
Stephen J. Pearton,Randy J. Shul,Robert G. Wilson,Fan Ren,J.M. Zavada,C. R. Abernathy,Catherine Vartuli,J. W. Lee,J.R. Mileham,J. D. MacKenzie +9 more
TL;DR: In this article, hydrogen is bound at defects or impurities and passivates their electrical activity, and the hydrogen is readily incorporated into GaN and related alloys during wet and dry etching, chemical vapor deposition of dielectric overlayers, boiling in water, and other process steps.
Patent
Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur
TL;DR: In this article, a fully processed wafer is cleaved, typically in the ambient atmosphere, into laser bars, the laser bars are loaded into an evacuable deposition chamber (preferably an ECR CVD chamber) and exposed to a H 2 S plasma.
Journal ArticleDOI
Investigation of wet etching solutions for In0.5Ga0.5P
TL;DR: In this article, the etch rates for p-type InGaP relative to n-type material were found to be faster in In-rich samples compared to stoichiometric In-GaP.
Journal ArticleDOI
Effect of ECR plasma on the luminescence efficiency of InGaAs and InP
Fan Ren,D.N. Buckley,K.M. Lee,Stephen J. Pearton,R.A. Bartynski,C. Constantine,W.S. Hobson,R.A. Hamm,P.C. Chao +8 more
TL;DR: In this article, the authors showed that InGaAs and InP exposed to N 2 or Ar ECR plasmas show reduced photoluminescence intensity, depending on both the microwave power level and any additional r.f. power applied to increase the energy of ions in the discharge.
Power semiconductor materials and devices
TL;DR: In this paper, the authors present a Symposium on new boule growth techniques for ultra-high-purity Si and widebandgap materials; CVD and epitaxial techniques for powermore materials; high power/high-temperature device structures; advanced wafer-scale thermal management; simulation tools specific to high-power devices; advanced processing techniques; and packaging/testing at high currents/temperatures.