F
Fan Yang
Researcher at China University of Petroleum
Publications - 1888
Citations - 34524
Fan Yang is an academic researcher from China University of Petroleum. The author has contributed to research in topics: Medicine & Chemistry. The author has an hindex of 65, co-authored 986 publications receiving 23818 citations. Previous affiliations of Fan Yang include G. D. Searle & Company & Peking University.
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Segmentectomy and Wedge Resection for Elderly Patients with Stage I Non-Small Cell Lung Cancer: A Systematic Review and Meta-Analysis
TL;DR: Sgmentectomy is promising when applied to elderly patients with stage I NSCLC, while wedge resection should be limited, and Randomized controlled trials are warranted to validate these findings.
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Reconfigurable and Efficient Implementation of 16 Boolean Logics and Full‐Adder Functions with Memristor Crossbar for Beyond von Neumann In‐Memory Computing
TL;DR: By merely relying on the fundamental structure of two memristors and a resistor, arbitrary Boolean logic can be reconfigured and calculated in two steps, while no additional voltage sources are needed beyond “±VP” and 0, and all state reversals are based on memristor set switching.
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Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods.
Chentian Shi,Chunfeng Zhang,Fan Yang,Min Joo Park,Joon Seop Kwak,Sukkoo Jung,Yoonho Choi,Xiaoyong Wang,Min Xiao +8 more
TL;DR: In this article, the suppression of efficiency droop induced by the process of density-activated defect recombination in nanorod structures of a-plane InGaN/GaN QWs was reported.
Journal ArticleDOI
Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods
Chentian Shi,Chunfeng Zhang,Fan Yang,Min Joo Park,Joon Seop Kwak,Sukkoo Jung,Yoonho Choi,Xiaoyong Wang,Min Xiao +8 more
TL;DR: The suppression of efficiency droop induced by the process of density-activated defect recombination in nanorod structures of a-plane InGaN/GaN QWs is reported.
Journal ArticleDOI
Design of Compact but Fabrication-Tolerant Vertical Coupler for Active–Passive Integration
TL;DR: In this paper, the authors proposed a novel scheme of compact but fabrication-tolerant vertical coupler based on resonant coupling for active-passive integration, which is used to carry out the design and optimization of various vertical Coupler structures efficiently.