F
Fang Wang
Researcher at Tianjin University of Technology
Publications - 70
Citations - 1457
Fang Wang is an academic researcher from Tianjin University of Technology. The author has contributed to research in topics: Thin film & Resistive random-access memory. The author has an hindex of 13, co-authored 66 publications receiving 987 citations. Previous affiliations of Fang Wang include Tianjin University.
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Two dimensional hexagonal boron nitride (2D-hBN): synthesis, properties and applications
TL;DR: There are a wide variety of processing routes that have been developed for 2D-hBN, including also those for doping, substitution, functionalization and combination with other materials to form heterostructures or h-BNC hybrid nanosheets, which are systematically elaborated for novel functions.
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Preparation and characterization of modified‐clay‐reinforced and toughened epoxy‐resin nanocomposites
TL;DR: In this paper, a nanometer-scale dispersion of layered clay within the crosslinked epoxy-resin matrix was confirmed by X-ray diffraction and transmission electron microscopy, and the basal spacing of the silicate layer was greater than 100-150 A.
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Investigation on the final polishing slurry and technique of silicon substrate in ULSI
TL;DR: In this paper, the authors investigated the polishing kinetics process and mechanism of the silicon substrate and proposed a new polishing slurry and polishing technique based on the investigation of the final polishing.
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Tunable interlayer coupling and Schottky barrier in graphene and Janus MoSSe heterostructures by applying an external field
Yi Li,Jiajun Wang,Baozeng Zhou,Fang Wang,Yinping Miao,Junqing Wei,Baojun Zhang,Kailiang Zhang +7 more
TL;DR: The calculations show that the intrinsic electronic properties of both the graphene and MoSSe monolayer are preserved well in the proposed two graphene/MoSSe heterostructures, and n-type Schottky contacts with a smallSchottky barrier height (SBH) are formed at their respective interfaces.
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Scalable Synthesis of Highly Crystalline MoSe2 and Its Ambipolar Behavior
TL;DR: An atmospheric pressure chemical vapor deposition (CVD) method is presented to achieve highly crystalline, single- and few-layered MoSe2 using a SiO2/Si substrate to provide a foundation for property-controlled synthesis ofMoSe2 and offer insight on the potential applications of the synthesized MoSe 2 in electronics and optoelectronics.