K
Kailiang Zhang
Researcher at Tianjin University of Technology
Publications - 184
Citations - 2826
Kailiang Zhang is an academic researcher from Tianjin University of Technology. The author has contributed to research in topics: Thin film & Magnetic field. The author has an hindex of 22, co-authored 152 publications receiving 2019 citations. Previous affiliations of Kailiang Zhang include Hebei University of Technology & Shenyang Normal University.
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Two dimensional hexagonal boron nitride (2D-hBN): synthesis, properties and applications
TL;DR: There are a wide variety of processing routes that have been developed for 2D-hBN, including also those for doping, substitution, functionalization and combination with other materials to form heterostructures or h-BNC hybrid nanosheets, which are systematically elaborated for novel functions.
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Ceria concentration effect on chemical mechanical polishing of optical glass
TL;DR: In this paper, it was found material removal rate (MRR) sharply increased from 250 to 675nm/min as the concentration decreased from 1 to 0.25% in optical glass chemical mechanical polishing (CMP) using ceria slurries.
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Preparation and characterization of modified‐clay‐reinforced and toughened epoxy‐resin nanocomposites
TL;DR: In this paper, a nanometer-scale dispersion of layered clay within the crosslinked epoxy-resin matrix was confirmed by X-ray diffraction and transmission electron microscopy, and the basal spacing of the silicate layer was greater than 100-150 A.
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Magnetic field tunability of optical microfiber taper integrated with ferrofluid
Yinping Miao,Jixuan Wu,Wei Lin,Kailiang Zhang,Yuan Yujie,Binbin Song,Hao Zhang,Bo Liu,Jianquan Yao +8 more
TL;DR: The results indicate the transmission and wavelength of the dips are adjustable by changing magnetic field intensity, which suggests a potential application of this device as a tunable all-in-fiber photonic device, such as magneto-optic modulator, filter, and sensing element.
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Highly Uniform, Self-Compliance, and Forming-Free ALD $\hbox{HfO}_{2}$ -Based RRAM With Ge Doping
Zhongrui Wang,Wei Zhu,A. Y. Du,L. Wu,Zheng Fang,X. A. Tran,Wen-Jun Liu,Kailiang Zhang,H-Y Yu +8 more
TL;DR: In this paper, an atomic layer deposited (ALD) HfO2 resistive-switching random access memory devices with high uniformity, self-compliance, and forming-free behavior are demonstrated.