Two-dimensional materials and single-atom catalysts are two frontier research fields in catalysis. A new category of catalysts with the integration of both aspects has been rapidly developed in recent years, and significant advantages were established to make it an independent research field. In this Review, we will focus on the concept of two-dimensional materials confining single atoms for catalysis. The new electronic states via the integration lead to their mutual benefits in activity, that is, two-dimensional materials with unique geometric and electronic structures can modulate the catalytic performance of the confined single atoms, and in other cases the confined single atoms can in turn affect the intrinsic activity of two-dimensional materials. Three typical two-dimensional materials are mainly involved here, i.e., graphene, g-C3N4, and MoS2, and the confined single atoms include both metal and nonmetal atoms. First, we systematically introduce and discuss the classic synthesis methods, advanced ...

Catalysis with Two-Dimensional Materials Confining Single Atoms: Concept, Design, and Applications.

Carbon as Catalyst and Support for Electrochemical Energy Conversion

Nitrogen-doped graphene: Synthesis, characterizations and energy applications

http://www.seu-npc.com/publications/Evolution%20of%20Raman%20spectra%20in%20nitrogen%20doped%20graphene.pdf

Evolution of Raman spectra in nitrogen doped graphene

3D graphene-based gel photocatalysts for environmental pollutants degradation.

https://www3.ntu.edu.sg/home/z.liu/download/30.pdf

A simple method to synthesize continuous large area nitrogen-doped graphene

BiVO4 quantum tubes loaded on reduced graphene oxide aerogel as efficient photocatalyst for gaseous formaldehyde degradation

The fi nding of an extremely large magnetoresistance effect on silicon based p–n junction with vertical geometry over a wide range of temperatures and magnetic fi elds is reported. A 2500% magnetoresistance ratio of the Si p–n junction is observed at room temperature with a magnetic fi eld of 5 T and the applied bias voltage of only 6 V, while a magnetoresistance ratio of 25 000% is achieved at 100 K. The current-voltage ( I–V ) behaviors under various external magnetic fi elds obey an exponential relationship, and the magnetoresistance effect is signifi cantly enhanced by both contributions of the electric fi eld inhomogeneity and carrier concentrations variation. Theoretical analysis using classical p–n junction transport equation is adapted to describe the I–V curves of the p–n junction at different magnetic fi elds and reveals that the large magnetoresistance effect origins from a change of space-charge region in the p–n junction induced by external magnetic fi eld. The results indicate that the conventional p–n junction is proposed to be used as a multifunctional material based on the interplay between electronic and magnetic response, which is signifi cant for future magneto-electronics in the semiconductor industry.

Fangcong Wang

Papers

A simple method to synthesize continuous large area nitrogen-doped graphene

BiVO4 quantum tubes loaded on reduced graphene oxide aerogel as efficient photocatalyst for gaseous formaldehyde degradation

A Large Magnetoresistance Effect in p-n Junction Devices by the Space-Charge Effect

Honeycomb-like Ni3S2 nanosheet arrays for high-performance hybrid supercapacitors

Improved photoelectrocatalytic hydrogen generation through BiVO4 quantum-dots loaded on nano-structured SnO2 and modified with carbon quantum-dots