F
Fangyuan Yang
Researcher at University of California, Santa Barbara
Publications - 20
Citations - 2225
Fangyuan Yang is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Magnetism & Landau quantization. The author has an hindex of 12, co-authored 17 publications receiving 1625 citations. Previous affiliations of Fangyuan Yang include Huazhong University of Science and Technology & Fudan University.
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Journal ArticleDOI
Direct observation of the layer-dependent electronic structure in phosphorene
Likai Li,Jonghwan Kim,Chenhao Jin,Guo Jun Ye,Diana Y. Qiu,Diana Y. Qiu,Felipe H. da Jornada,Felipe H. da Jornada,Zhiwen Shi,Long Chen,Zuocheng Zhang,Fangyuan Yang,Kenji Watanabe,Takashi Taniguchi,Wencai Ren,Steven G. Louie,Steven G. Louie,Xianhui Chen,Yuanbo Zhang,Feng Wang,Feng Wang +20 more
TL;DR: It is experimentally demonstrated that the electronic structure of few-layer phosphorene varies significantly with the number of layers, in good agreement with theoretical predictions, and the interband optical transitions cover a wide, technologically important spectral range.
Journal ArticleDOI
Gate-tunable phase transitions in thin flakes of 1T-TaS2
Yijun Yu,Fangyuan Yang,Xiu Fang Lu,Yajun Yan,Yong-Heum Cho,Liguo Ma,X. H. Niu,Sejoong Kim,Young-Woo Son,Donglai Feng,Shiyan Li,Sang-Wook Cheong,Xianhui Chen,Yuanbo Zhang +13 more
TL;DR: An ionic field-effect transistor (termed an iFET), in which gate-controlled Li ion intercalation modulates the material properties of layered crystals of 1T-TaS2, opens up possibilities in searching for novel states of matter in the extreme charge-carrier-concentration limit.
Journal ArticleDOI
Quantum Hall effect in black phosphorus two-dimensional electron system
Likai Li,Fangyuan Yang,Guo Jun Ye,Zuocheng Zhang,Zengwei Zhu,Wenkai Lou,Wenkai Lou,Xiaoying Zhou,Xiaoying Zhou,Liang Li,Kenji Watanabe,Takashi Taniguchi,Kai Chang,Kai Chang,Yayu Wang,Xianhui Chen,Yuanbo Zhang +16 more
TL;DR: The observation of the integer quantum Hall effect in a high-quality black phosphorus 2DES is reported, and important information on the energetics of the spin-split Landau levels in black phosphorus is gained.
Journal ArticleDOI
Electrical switching of magnetic order in an orbital Chern insulator
Hryhoriy Polshyn,Jihang Zhu,Manish Kumar,Yuxuan Zhang,Fangyuan Yang,Charles Tschirhart,Marec Serlin,Kenji Watanabe,Takashi Taniguchi,Allan H. MacDonald,Andrea Young +10 more
TL;DR: Non-volatile electrical switching of magnetic order in an orbital Chern insulator is experimentally demonstrated using a moiré heterostructure and analysis shows that the effect is driven by topological edge states.
Journal ArticleDOI
Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors
Zuocheng Zhang,Likai Li,Jason Horng,Naizhou Wang,Fangyuan Yang,Yijun Yu,Yu Zhang,Guorui Chen,Kenji Watanabe,Takashi Taniguchi,Xianhui Chen,Feng Wang,Feng Wang,Yuanbo Zhang +13 more
TL;DR: The strain-modulated bandgap significantly alters the density of thermally activated carriers and opens up opportunities for future development of electromechanical transducers based on black phosphorus, and an ultrasensitive strain gauge constructed from black phosphorus thin crystals are demonstrated.