F
Fauziyah Salehuddin
Researcher at Universiti Teknikal Malaysia Melaka
Publications - 94
Citations - 375
Fauziyah Salehuddin is an academic researcher from Universiti Teknikal Malaysia Melaka. The author has contributed to research in topics: Threshold voltage & MOSFET. The author has an hindex of 9, co-authored 91 publications receiving 332 citations. Previous affiliations of Fauziyah Salehuddin include Universiti Tenaga Nasional & National University of Malaysia.
Papers
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Journal Article
Modeling Mach Zehnder Interferometer (MZI) Modulator on Silicon-On-Insulator (SOI)
Abdul Razak Hanim,Haroon Hazura,A.S. Mohd Zain,Fauziyah Salehuddin,P. S. Menon,Sahbudin Shaari +5 more
TL;DR: In this article, the effects of different applied voltages on the performance of Mach Zehnder Interferometer (MZI) modulator on Silicon-On-Insulator (SOI).
Journal Article
Analyze Of Process Parameter Variance In 19nm Wsi2/Tio2 NMOS Device Using 2k-Factorial Design
Fauziyah Salehuddin,Ameer F. Roslan,A.E. Zailan,K.E. Kaharudin,Anis Suhaila Mohd Zain,A. H. Afifah Maheran,Abdul Razak Hanim,Haroon Hazura,S. K. Idris,Wira Hidayat Mohd Saad +9 more
TL;DR: In this paper, the impact of process parameter variance on the drive current (ION) and leakage current (IOFF) for 19nm WSi2/TiO2 NMOS device using 2k-factorial design was investigated.
Journal ArticleDOI
Impact of Gouy-Chapman-Stern model on conventional ISFET sensitivity and stability
Ahmed M. Dinar,A.S. Mohd Zain,Fauziyah Salehuddin,M. K. Abdulhameed,Mowafak K. Mohsen,Mothana L. Attiah +5 more
TL;DR: In this article, a commercial Silvaco TCAD was used to re-append Gouy-Chapman-Stern model as ISFET sensing membrane to investigate its impact on sensitivity and stability.
Proceedings ArticleDOI
Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device
TL;DR: The most effective process parameters with respect to threshold voltage and leakage current are oxide growth temperature and S/D implant dose and Halo implant dose respectively, Whereas the second ranking factor affecting VTH and ILeak are halo implant tilt and halo implants dose respectively.
Journal ArticleDOI
Performance analysis of high-k materials as stern layer in ion-sensitive field effect transistor using commercial TCAD
Ahmed M. Dinar,A.S. Mohd Zain,Fauziyah Salehuddin,Mowafak K. Mohsen,Mothana L. Attiah,M. K. Abdulhameed +5 more
TL;DR: In this paper, a comprehensive investigation of different high-k material, Tio2, Ta2O5, ZrO2, Al2O3, HfO2 and Si3N4 as well as normal silicon dioxide and their effects on ISFET sensitivity and stability is presented.