THE DESIGN AND ANALYSIS OF EXPERIMENTS. By Oscar Kempthorne. New York, John Wiley and Sons, Inc., 1952. 631 pp. $8.50. This book by a teacher of statistics (as well as a consultant for \"experimenters\") is a comprehensive study of the philosophical background for the statistical design of experiment. It is necessary to have some facility with algebraic notation and manipulation to be able to use the volume intelligently. The problems are presented from the theoretical point of view, without such practical examples as would be helpful for those not acquainted with mathematics. The mathematical justification for the techniques is given. As a somewhat advanced treatment of the design and analysis of experiments, this volume will be interesting and helpful for many who approach statistics theoretically as well as practically. With emphasis on the \"why,\" and with description given broadly, the author relates the subject matter to the general theory of statistics and to the general problem of experimental inference. MARGARET J. ROBERTSON

The Design and Analysis of Experiments

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

Worldwide, the number of people affected by diabetes is rapidly increasing due to aging populations and sedentary lifestyles, with the prospect of exceeding 500 million cases in 2030, resulting in one of the most challenging socio-health emergencies of the third millennium. Daily management of diabetes by patients relies on the capability of correctly measuring glucose concentration levels in the blood by using suitable sensors. In recent years, glucose monitoring has been revolutionized by the development of Continuous Glucose Monitoring (CGM) sensors, wearable non/minimally-invasive devices that measure glucose concentration by exploiting different physical principles, e.g., glucose-oxidase, fluorescence, or skin dielectric properties, and provide real-time measurements every 1–5 min. CGM opened new challenges in different disciplines, e.g., medicine, physics, electronics, chemistry, ergonomics, data/signal processing, and software development to mention but a few. This paper first makes an overview of wearable CGM sensor technologies, covering both commercial devices and research prototypes. Then, the role of CGM in the actual evolution of decision support systems for diabetes therapy is discussed. Finally, the paper presents new possible horizons for wearable CGM sensor applications and perspectives in terms of big data analytics for personalized and proactive medicine.

https://www.mdpi.com/2079-9292/6/3/65/pdf

Wearable Continuous Glucose Monitoring Sensors: A Revolution in Diabetes Treatment

Glucose monitoring devices represent an exciting frontier in diabetes research. Great efforts have been dedicated to the development of non-invasive glucose monitoring devices, which may considerably improve the quality of life for people suffering from diabetes and facilitate their compliance for glucose monitoring. This manuscript reviews past, current and emerging non-invasive glucose monitoring techniques and devices and presents the major challenges they face. Poor glucose specificity and sensitivity, physiological time lag, calibration process and human factors perspective are discussed. Since incorporating user requirements into device development may potentially increase user acceptance and improve patient safety and device effectiveness, special attention is given to usability, user experience and applicability for home use, thus extending previous published reviews.

/pdf/non-invasive-glucose-monitoring-a-review-of-challenges-and-3xex5u7hgw.pdf

Non-Invasive Glucose Monitoring: A Review of Challenges and Recent Advances

Wearable healthcare: Lessons from the past and a peek into the future

2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts

In this research, the performance of the 19 nm single gate MOSFET is enhanced through the implementation of the high permittivity dielectric material. The MOSFET scaling trends necessities in device dimensions can be satisfied through the implementation of the high-K dielectric materials in place of the SiO2. Therefore, the 19 nm n-channel MOSFET device with different High-K dielectric materials are implemented and its performance improvement has also been analysed. Virtual fabrication is exercised through ATHENA module from Silvaco TCAD tool. Meanwhile, the device characteristic was utilized by using an ATLAS module. The aforementioned materials have also been simulated and compared with the conventional gate oxide SiO2 for the same structure. At the end, the results have proved that Titanium oxide (TiO2) device is the best dielectric material with a combination of metal gate Tungsten Silicides (WSix). The drive current (ION) of this device (WSix/TiO2) is 587.6 µA/um at 0.534 V of threshold voltage (VTH) as opposed to the targeted 0.530 V predicted, as well as a relatively low IOFF that is obtained at 1.92 pA/µm. This ION value meets the minimum requirement predicted by International Technology Roadmap for Semiconductor (ITRS) 2013 prediction for low performance (LP) technology.

/pdf/enhanced-performance-of-19-single-gate-mosfet-with-high-49zqasi7ms.pdf

Enhanced performance of 19 single gate MOSFET with high permittivity dielectric material

This paper investigates the impact of the high-K material gate spacer on short channel effects (SCEs) for the 16 nm double-gate FinFET (DG-FinFET), where depletion-layer widths of the source-drain corresponds to the channel length. Virtual fabrication process along with design modification throughout the study and its electrical characterization is implemented and significant improvement is shown towards the altered structure design whereby in terms of the ratio of drive current against the leakage current (I ON /I OFF ratio), all three materials tested being S 3 N 4 , HfO 2 and TiO 2 increases from the respective 60.90, 80.70 and 84.77 to 84.77, 91.54 and 92.69. That being said, the incremental in ratio has satisfied the incremental on the drive current as well as decreases the leakage current. Threshold voltage (V TH ) for all dielectric materials have also satisfy the minimum requirement predicted by the International Technology Roadmap Semiconductor (ITRS) 2013 for which is at 0.461±12.7% V. Based on the results obtained, the high-K materials have shown a significant improvement, specifically after the modifications towards the Source/Drain. Compared to the initial design made, TiO 2 has improved by 12.94% after the alteration made in terms of the overall I ON and I OFF performances through the I ON /I OFF ratio value obtained, as well as meeting the required value for V TH obtained at 0.464V. The I ON from high-K materials has proved to meet the minimum requirement by ITRS 2013 for low performance Multi-Gate technology.

/pdf/comparative-high-k-material-gate-spacer-impact-in-dg-finfet-48tdfz3upn.pdf

Comparative high-k material gate spacer impact in DG-FinFET parameter variations between two structures

This paper presents a study of optimizing input process parameters on leakage current (IOFF) in a silicon-on-insulator (SOI) Vertical Double-Gate (DG) Metal Oxide FieldEffect-Transistor (MOSFET) by using the L36 Taguchi method. The performance of the SOI Vertical DG-MOSFET device is evaluated in terms of its lowest leakage current (IOFF) value. An orthogonal array (OA), main effects, signal-to-noise ratio (SNR) and analysis of variance (ANOVA) are utilized in order to analyse the effect of input process parameter variation on the leakage current (IOFF). Based on the results, the minimum leakage current ((IOFF) of the SOI Vertical DG-MOSFET is observed to be 0.009 nA/µm or 9 ρA/µm while keeping the drive current (ION) value at 434 µA/µm. Both the drive current (ION) and leakage current (IOFF) values yield a higher ION/IOFF ratio (48.22 x 10 6 ) for low power consumption application. Meanwhile, the polysilicon doping tilt angle and polysilicon doping energy are recognized as the most dominant factors, contributing factor effects percentages of 59% and 25% respectively.

/pdf/optimization-of-process-parameter-variations-on-leakage-1ky59jx491.pdf

Fauziyah Salehuddin

Papers

2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts

Enhanced performance of 19 single gate MOSFET with high permittivity dielectric material

Comparative high-k material gate spacer impact in DG-FinFET parameter variations between two structures

Optimization of process parameter variations on leakage current in SOI vertical double gate MOSFET device

Beyond Nernst Sensitivity of Ion Sensitive Field Effect Transistor based on Ultra-Thin Body Box FDSOI