Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

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Spintronics: Fundamentals and applications

First-principles calculations have evolved from mere aids in explaining and supporting experiments to powerful tools for predicting new materials and their properties. In the first part of this review we describe the state-of-the-art computational methodology for calculating the structure and energetics of point defects and impurities in semiconductors. We will pay particular attention to computational aspects which are unique to defects or impurities, such as how to deal with charge states and how to describe and interpret transition levels. In the second part of the review we will illustrate these capabilities with examples for defects and impurities in nitride semiconductors. Point defects have traditionally been considered to play a major role in wide-band-gap semiconductors, and first-principles calculations have been particularly helpful in elucidating the issues. Specifically, calculations have shown that the unintentional n-type conductivity that has often been observed in as-grown GaN cannot be a...

First-principles calculations for defects and impurities: Applications to III-nitrides

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The p...

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Luminescence properties of defects in GaN

The development of a compact, solid-state light-emitting diode (LED) that emits at 210 nanometres — the shortest wavelength yet achieved for any type of LED — represents an important step towards achieving exciton-related light-emitting devices and replacing inefficient gas light sources with solid-state light sources. Compact high-efficiency ultraviolet solid-state light sources1—such as light-emitting diodes (LEDs) and laser diodes—are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond2 and III–V nitride semiconductors (GaN, AlGaN and AlN; refs 3–10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap11 of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

We review the electronic properties of bilayer graphene, beginning with a description of the tight-binding model of bilayer graphene and the derivation of the effective Hamiltonian describing massive chiral quasiparticles in two parabolic bands at low energies. We take into account five tight-binding parameters of the Slonczewski–Weiss–McClure model of bulk graphite plus intra- and interlayer asymmetry between atomic sites which induce band gaps in the low-energy spectrum. The Hartree model of screening and band-gap opening due to interlayer asymmetry in the presence of external gates is presented. The tight-binding model is used to describe optical and transport properties including the integer quantum Hall effect, and we also discuss orbital magnetism, phonons and the influence of strain on electronic properties. We conclude with an overview of electronic interaction effects.

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The electronic properties of bilayer graphene.

We study the ballistic magnetotransport in a double quantum point contact (QPC) device consisting of a quasi-one-dimensional quantum wire with an embedded islandlike impurity-etched nanohole as in a recently published experiment {J. C. Chen et al., [Appl. Phys. Lett. 94, 012105 (2009)]}. We reproduce the zero field quantized conductance, the interference phenomenon induced by the coupled QPCs, as well as the Ramsauer-like resonances observed in the experiments. At finite magnetic fields Fano-type resonances arises in the conductance due to the formation of localized states at the impurity periphery and to an interedge state resonant coupling effect. It is predicted that the Fano-type resonances can be controlled by an asymmetric confinement of the QPCs.

Tuning Fano-type resonances in coupled quantum point contacts by applying asymmetric voltages

Quantum many-body systems with spin degree of freedom may exhibit novel phases and emergent phenomena that can only described beyond mean-ﬁeld theories. In this work, we present a generic and systematic method to fully determine the variational perturbations of a mean-ﬁeld solution of interacting spinor systems with rotational symmetry. The method is based in a generalization of the Majorana stellar representation for quantum mixed states and group symmetry arguments. We apply the approach using the system of the spinor Bose Einstein condensates (BECs) with spin 1 and 2. To further exemplify the advantages of the method, we calculate the phase diagram of a spin-2 BEC at ﬁnite temperatures.

Spinor Bose-Einstein condensates: self-consistent symmetries and characterization

We present a theoretical study of the spectral and the spin-dependent transport properties of a few electron semiconductor parallel double quantum dot (DQD) in the presence of local induced Zeeman splittings at the quantum dots. Working in an extended Hubbard model and treating the coupled QD as a single coherent system, the linear response spin-dependent conductance is calculated at low temperatures. We analyze the conditions such that the device would operate as a bipolar spin filter by only varying the incident electron Fermi energy from non-magnetic leads.

Spin Filter Effect in a Parallel Double Quantum Dot

We employ effective mass theory for degenerate hole-bands to calculate the acceptor binding energies for Be, Mg, Zn, Ca, C and Si substitutional acceptors in GaN and AlN. The calculations are performed through the 6×6 Rashba-Sheka-Pikus and the Luttinger-Kohn matrix Hamiltonians for wurtzite (WZ) and zincblende (ZB) crystal phases, respectively. An analytic representation for the acceptor pseudopotential is used to introduce the specific nature of the impurity atoms. The energy shift due to polaron effects is also considered in this approach. The ionization energy estimates are in very good agreement with those reported experimentally in WZGaN. The binding energies for ZB-GaN acceptors are all predicted to be shallower than the corresponding impurities in the WZ phase. The binding energy dependence upon the crystal field splitting in WZ-GaN is analyzed. Ionization levels in AlN are found to have similar ‘shallow’ values to those in GaN, but with some important differences, which depend on the band structure parameterizations, especially the value of crystal field splitting used.

http://www.phy.ohiou.edu/~ulloa/papers/mirelesprb.pdf

Acceptor Binding Energies in GaN and AIN

We introduce a spin-interference device that comprises a quantum ring (QR) with three embedded quantum point contacts (QPCs) and study theoretically its spin transport properties in the presence of Rashba spin-orbit interaction. Two of the QPCs conform the lead-to-ring junctions while a third one is placed symmetrically in the upper arm of the QR. Using an appropriate scattering model for the QPCs and the $\mathbb{S}$-matrix scattering approach, we analyze the role of the QPCs on the Aharonov-Bohm (AB) and Aharonov-Casher (AC) conductance oscillations of the QR-device. Exact formulas are obtained for the spin-resolved conductances of the QR-device as a function of the confinement of the QPCs and the AB/AC phases. Conditions for the appearance of resonances and anti-resonances in the spin-conductance are derived and discussed. We predict very distinctive variations of the QR-conductance oscillations not seen in previous QR proposals. In particular we find that the interference pattern in the QR can be manipulated to a large extend by varying electrically the lead-to-ring topological parameters. The latter can be used to modulate the AB and AC phases by applying gate voltage only. We have shown also that the conductance oscillations exhibits a crossover to well-defined resonances as the lateral QPC confinement strength is increased, mapping the eigenenergies of the QR. In addition, unique features of the conductance arises by varying the aperture of the upper-arm QPC and the Rashba spin-orbit coupling. Our results may be of relevance for promising spin-orbitonics devices based in quantum interference mechanisms.

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Francisco Mireles

Papers

Tuning Fano-type resonances in coupled quantum point contacts by applying asymmetric voltages

Spinor Bose-Einstein condensates: self-consistent symmetries and characterization

Spin Filter Effect in a Parallel Double Quantum Dot

Acceptor Binding Energies in GaN and AIN

Quantum-ring spin interference device tuned by quantum point contacts