F
Frank Glas
Researcher at Université Paris-Saclay
Publications - 111
Citations - 6847
Frank Glas is an academic researcher from Université Paris-Saclay. The author has contributed to research in topics: Nanowire & Molecular beam epitaxy. The author has an hindex of 38, co-authored 108 publications receiving 6420 citations. Previous affiliations of Frank Glas include Orange S.A. & Centre national de la recherche scientifique.
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Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
TL;DR: In this article, InAs/GaAs superlattices with ultra-thin InAs (few monolayer) were grown on GaAs substrates and the physical properties: x ray, transmission electron microscopy, and photoluminescence were used to characterize the different growth processes.
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Why does wurtzite form in nanowires of III-V zinc blende semiconductors?
TL;DR: A nucleation-based model is developed to explain the formation of the wurtzite phase during the catalyzed growth of freestanding nanowires of zinc blende semiconductors and shows that in vapor-liquid-solid nanowire growth, nucleation generally occurs preferentially at the triple phase line.
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Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires
TL;DR: In this article, it was shown that there exists a radius-dependent critical layer thickness below which no interfacial dislocation should be introduced, and that this critical thickness becomes infinite for radii less than some critical value, below which arbitrarily thick coherent layers should be obtainable.
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Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
D. Spirkoska,Jordi Arbiol,Anders Gustafsson,Sonia Conesa-Boj,Frank Glas,Ilaria Zardo,Matthias Heigoldt,Mhairi Gass,A Bleloch,Sònia Estradé,Michael Kaniber,J. Rossler,Francesca Peiró,Joan Ramon Morante,Gerhard Abstreiter,Lars Samuelson,A. Fontcuberta i Morral,A. Fontcuberta i Morral +17 more
TL;DR: The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented in this paper.
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Growth kinetics and crystal structure of semiconductor nanowires
TL;DR: In this article, a theoretical model for the growth of semiconductor nanowires is developed, which enables one to determine the growth conditions under which the formation of semiconductors is possible.