F
Fumiya Hattori
Researcher at Shimane University
Publications - 21
Citations - 193
Fumiya Hattori is an academic researcher from Shimane University. The author has contributed to research in topics: Wireless power transfer & Inverter. The author has an hindex of 8, co-authored 20 publications receiving 161 citations. Previous affiliations of Fumiya Hattori include Nagoya University.
Papers
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Journal ArticleDOI
A Novel High-Efficiency Gate Drive Circuit for Normally Off-Type GaN FET
TL;DR: In this paper, an active discharged-type gate drive circuit was proposed to decrease the reverse conduction time of the gallium nitride field effect transistor (GaN FET).
Proceedings ArticleDOI
An analysis of false turn-on mechanism on power devices
TL;DR: This paper analyzes the gate noise performance using simulation and experimental tests focusing on the parasitic inductance of the power devices terminals and found that the gate noises can be related to the recovery current of the body diodes.
Journal ArticleDOI
Capacitor-Less Gate Drive Circuit Capable of High-Efficiency Operation for Non-Insulating-Gate GaN FETs
TL;DR: In this paper, a capacitor-less gate drive circuit is proposed as a solution to GaN-based power electronics circuits, which shows the effectiveness of a capacitorless gate circuit in terms of gate drive loss, reverse conduction loss, and recovery loss.
Proceedings ArticleDOI
Design method considering magnetic saturation issue of coupled inductor in interleaved CCM boost PFC converter
TL;DR: In this paper, the authors analyzed the change of the magnetic flux in a half cycle of the input AC voltage and proposed a design method of the coupled inductor considering the maximum magnetic flux.
Proceedings ArticleDOI
Proposal and analysis of gate drive circuit suitable for GaN-FET
TL;DR: The gate-drive makes GaNFET turn-off sufficiently and also reduce a loss in the reverse conduction time which the reverse drain-source current flows to Ga NFET at off-state.