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Synchrotron Radiation Research

The flux‐flow critical current as a function of transverse magnetic field for an oxygen‐doped Al film perforated with a two‐dimensional triangular lattice pattern of holes shows pronounced structure at harmonically related values of the applied magnetic field. Effects at thecharacteristic fields are interpreted in terms of the interaction between commensurate flux‐line sublattices, one of which is strongly pinned to the holes by the vortex‐hole coupling force and the other of which is located interstitially between the hole‐lattice sites. A model is proposed for the vortex‐hole coupling force which, in conjunction with a treatment of vortex‐vortex interactions, qualitatively accounts for the observed temperature and field dependence of these harmonically related critical currents.

Critical currents associated with the interaction of commensurate flux-line sublattices in a perforated Al film

A radiofrequency plasma reactor ( 1 ) for the treatment of substantially large sized substrates is disclosed, comprising between the electrodes ( 3, 5 ) of the plasma reactor a solid or gaseous dielectric layer ( 11 ) having a non planar-shaped surface-profile, said profile being defined for compensating a process non uniformity in the reactor or generating a given distribution profile.

Plasma Reactor for the Treatment of Large Size Substrates

Afferent electrical nerve stimulation is an approach showing many promises with regard to sensory feedback for powered prostheses. It is well tolerated, can transmit fairly high amounts of information, and has several characteristics making it superior to electrocutaneous and vibrotactile devices when applied to prostheses. The feedback information is transferred in modulated form either by means of the current pulse amplitude (a.m.) or by the current pulse frequency (f.m.) A.M. stimulation should be applied in such a way that it gives rise to characteristic changes in the distribution of paresthesias with changing current. Used in this way it is not dependent upon minor changes in electrode position, it is easy to learn and gives high rates of information, even in untrained subjects. The number of channels that can be used in each nerve is, however, limited because of the large amount of axons necessary to achieve the spatial spread. F.M. stimulation is more difficult to learn than a.m. but gives the same rate of information transfer when used in trained individuals. Like a.m. it is not dependent upon minor changes in electrode position, but a smaller number of axons is needed to achieve discrimination. Thus several channels can be used in each nerve. Both with a.m. and f.m. stimulation a trained subject can discriminate five or six discrete levels with a rate of correct recognition of more than 75%, the amount of transmitted information being about 1·8 bits per symbol.

Human ability to discriminate various parameters in afferent electrical nerve stimulation with particular reference to prostheses sensory feedback.

Room temperature stresses were found to be tensile for chemical vapor deposition films of the composition B2N and compressive for BN, with all films becoming more tensile with heating. Analyses of the stress‐temperature curves of identical films of BN deposited on two different substrate materials yield values of 1.3×1012 dynes/cm2 for the elastic stiffness parameter E/(1−ν) and 1.0 ppm/°C for the thermal expansion coefficient. This technique is of general applicability to thin films and it is believed to be the first practical (nondestructive) means of determining both the elastic stiffness parameter and thermal expansion coefficient of a film.

Elastic stiffness and thermal expansion coefficient of BN films

To achieve the high throughput necessary for a practical X-ray lithographic system, we have devised a new overall approach to X-ray lithography based on the use of X-rays with wavelengths of 4-6 A rather than the 8.34-A wavelength used in previous work. The principal advantage of the shorter wavelengths is that they allow a system to have X-ray windows so that large area patterns can be replicated under ambient conditions. In addition, the shorter wavelengths simplify the selection of mask substrate materials; thus we have developed a new X-ray mask structure using an optically transparent Mylar substrate. This permits realignment to be done by optical means. We also report results obtained with a new negative resist with high sensitivity to the shorter wavelength X-rays. We have achieved the replication of submicron size features using a 4.6-A rhodium X-ray source, a Mylar mask with 7000-A thick gold patterns, and the new resist, and have demonstrated the practicality of this system by the fabrication of propagating magnetic bubble structures with small features.

High speed replication of submicron features on large areas by X-ray lithography

New resists containing chlorine to enhance absorption to PdLα X-radiation at 4.37 A have higher sensitivity than currently available high-speed electron resists when used in a high-throughput PdLα X-ray exposure system developed by Maydan and coworkers. Of the three classes of materials examined the poly(chloroalkyl acrylates) have the best properties. The sensitivity and contrast of these negative resists are dependent on the amount of Cl present, the structure of the chloroalkyl side chain, the inclusion of reactive functional groups, and molecular weight. Contrast is found to decrease with increasing sensitivity achieved by either increasing molecular weight or incorporating more reactive glycidyl groups. We suggest that such behavior, which is not predicted by theories of radiationinduced crosslinking, has its origin in competitive formation of intramolecular crosslinks with the desired, intermolecular crosslinks. Poly(2, 3-dichloro-1-propyl acrylate) has been investigated in greatest detail. Samples of this polymer requiring a dose of 7 mJ/cm2 for 50 percent of the initial resist thickness (2 min exposure) have been used successfully to wet etch 1 μm features into SiO2, Al and Cr and 2 μm features into phosphosilicate glass. It has moderate resistance to ion milling and good resistance to plasma etching with Freon-based plasmas.

Sensitive chlorine-containing resists for X-ray lithography

X‐ray lithography replication using characteristic and continuous x radiation is studied and compared with exposure results obtained using only characteristic radiation. Several spurious effects that affect the mask contrast and system resolution are discussed.

Spurious effects caused by the continuous radiation and ejected electrons in x‐ray lithography

In a plasma-assisted dry etching process designed to pattern VLSI devices, a relatively high and uniform etch rate exhibiting low contamination is achieved over the entire surface extent of each wafer to be etched. This is accomplished by mounting the wafers in a unique fashion on one of two spaced-apart electrodes in the reaction chamber of a dry etching system. In particular, the front surface of each wafer is maintained in substantially the same plane as that of surrounding dielectric material. Additionally, the thickness of the surrounding dielectric material is designed to be considerably greater than the thickness of any dielectric material in contact with the back surface of each wafer. In that way, the entire front surface extent of each wafer is influenced by a relatively uniform electric field. Moreover, the available field in the chamber is in effect focussed onto the wafer surfaces, thereby achieving a relatively high etch rate characterized by low contamination.

Etching apparatus and method

A new CMOS device which avoids latchup while achieving a spacing between the n-channel and p-channel FETs of the device smaller than 10 μm, as well as a method for fabricating the choice, is disclosed. The inventive device, which is formed in a substrate comprising a relatively heavily doped bulk region supporting a relatively thin, moderately doped layer, includes a polysilicon-filled trench extending through a portion of the layer, between the n- and p-channel FETs of the device. The inventive device also includes a relatively heavily doped region extending from a bottom of the trench to the bulk region. The polysilicon-filled trench, in combination with both the relatively heavily doped region and bulk region, prevents latchup.

G.A. Coquin

Papers

High speed replication of submicron features on large areas by X-ray lithography

Sensitive chlorine-containing resists for X-ray lithography

Spurious effects caused by the continuous radiation and ejected electrons in x‐ray lithography

Etching apparatus and method

Latchup-preventing CMOS device