G
G. Brill
Researcher at United States Army Research Laboratory
Publications - 40
Citations - 701
G. Brill is an academic researcher from United States Army Research Laboratory. The author has contributed to research in topics: Molecular beam epitaxy & Etch pit density. The author has an hindex of 17, co-authored 40 publications receiving 655 citations.
Papers
More filters
Journal ArticleDOI
Dislocation reduction in CdTe/Si by molecular beam epitaxy through in-situ annealing
TL;DR: In this article, the authors report on their systematic study of in-situ cyclic annealing of CdTe/Si and its impact on dislocation density, and they observe a two orders of magnitude reduction of dislocation densities on annealed CdTE/Si composite substrate.
Journal ArticleDOI
MBE growth and device processing of MWIR HgCdTe on large area Si substrates
G. Brill,Silviu Velicu,Paul Boieriu,Y. P. Chen,Nibir K. Dhar,T. S. Lee,Yusuf Selamet,S. Sivananthan +7 more
TL;DR: In this article, a noncontact (indium-free) substrate mounting was used to grow mid-wave infrared (MWIR) HgCdTe material on 3-inch CdTe/Si substrates.
Journal ArticleDOI
Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy
Yong Chang,C. R. Becker,C. H. Grein,J. Zhao,C. Fulk,T.N. Casselman,R. Kiran,X. J. Wang,E. Robinson,S. Y. An,Shubhrangshu Mallick,S. Sivananthan,Toshihiro Aoki,Changzhen Wang,David J. Smith,Silviu Velicu,J. Crocco,Y. P. Chen,G. Brill,Priyalal Wijewarnasuriya,Nibir K. Dhar,Robert Sporken,Robert Sporken,Vaidya Nathan +23 more
TL;DR: The surface morphology and crystallinity of HgCdTe films grown by molecular beam epitaxy (MBE) on both CdZnTe and CdTe/Si (211)B substrates were characterized using atomic force microscopy (AFM), as well as scanning (SEM) and transmission (TEM) electron microscopy as discussed by the authors.
Journal ArticleDOI
Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance
M. Carmody,J. G. Pasko,D. D. Edwall,M. Daraselia,L. A. Almeida,J. Molstad,John H. Dinan,J. K. Markunas,Yuanping Chen,G. Brill,Nibir K. Dhar +10 more
TL;DR: In this article, a set of test diodes from LWIR HgCdTe grown on Si wafers with either CdTe or CdSeTe buffer layers are compared in terms of threading dislocation density.
Journal ArticleDOI
Growth and Analysis of HgCdTe on Alternate Substrates
J. D. Benson,L. O. Bubulac,P. J. Smith,R. N. Jacobs,J. K. Markunas,M. Jaime-Vasquez,L. A. Almeida,Andrew J. Stoltz,J. M. Arias,G. Brill,Y. Chen,Priyalal Wijewarnasuriya,S. Farrell,S. Farrell,U. Lee +14 more
TL;DR: In this paper, dislocations generated at the HgCdTe/cdTe (buffer layer) interface are demonstrated to play a significant role in influencing the crystalline characteristics of HgClDTe epilayers on alternate substrates (AS), and the reduction in dislocation density as a function of depth is enhanced by annealing.